Hostname: page-component-cd9895bd7-jkksz Total loading time: 0 Render date: 2024-12-27T01:58:33.731Z Has data issue: false hasContentIssue false
  • English
  • Français

A Relationship between Interface Trap Density and Transconductance in 6H-SiC Enhancement Mode Field Effect Transistors

Published online by Cambridge University Press:  10 February 2011

M. W. Dryfuse  and
M. Tabib-Azar
M. W. Dryfuse
Affiliation:
Electrical Eng. & Appl. Phys. Dept. Case Western Reserve University, Cleveland, Ohio 44106
M. Tabib-Azar
Affiliation:
Electrical Eng. & Appl. Phys. Dept. Case Western Reserve University, Cleveland, Ohio 44106
Get access

Abstract

An explicit analytical expression relating the interface trap densities and transconductance is derived for enhancement mode field effect transistors without any simplifying assumptions regarding the energy distribution of traps. Using this relationship, the interface trap densities were calculated from transconductance data and compared to experimental data and that provided in the literature. Our expression provides a simple and convenient method to reliably estimate interface traps densities from the readily available transconductance data provided in the pertinent literature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 410: Symposium S – Covalent Ceramics III-Science and Technology of Non-Oxides , 1995 , 69
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Nicollian, E. H. and Brews, J. R., MOS, Physics and Technology, John Wiley and Sons, New York (1982).Google Scholar
2. Lile, D. L., Physics and Chemistry of III-V Compound Semiconductor Interfaces, edited by Wilmsen, C., N Y, Plenum(1983).Google Scholar
3. Trew, R. J. et al., Proceedings of the IEEE, 79(5), pp. 598–620 (1991).Google Scholar
4. Neudeck, P., Kang, S., Petit, J., and Tabib-Azar, M., J. Appl. Phys. 75 (11), (1994).Google Scholar
5. Tabib-Azar, M., Solid-State Electronics, 38(7), 1395 (1995).Google Scholar
6. Sheony, J., et al, 21st Int. Symp. Compound Semi., San Diego, Sept. 18–22, 1994.Google Scholar
7. Kang, S., Neudeck, P., Petit, J., and Tabib-Azar, M., Inst. of Physics Series# 137, pp. 633–636 (1993).Google Scholar
8. Dryfuse, M., and Tabib-Azar, M., To appear in Solid-State Electronics.Google Scholar
9. Cree Research Inc., 2810 Meridian Parkway, Suite 176, Durham, NC 27713.Google Scholar
10. Raynaud, C. et al., J. Appl. Phys. 76(2), 993 (1994).Google Scholar
11. Brown, D. M. et al., IEE Trans. on Electron Dev. 41(4), 618 (1994)Google Scholar
12. Schroder, D. K., Semiconductor Material and Device Characterization, Wiley, N. Y. (1990).Google Scholar