Hostname: page-component-cd9895bd7-gxg78 Total loading time: 0 Render date: 2024-12-27T01:30:33.307Z Has data issue: false hasContentIssue false
  • English
  • Français

A Relationship Between Interatomic Bonding and Electron Transport in Plasma–Deposited, Amorphous Metal Alloys

Published online by Cambridge University Press:  22 February 2011

G. E. Pike ,
A. K. Hays ,
G. C. Nelson  and
I. J. Fritz
G. E. Pike
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
A. K. Hays
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
G. C. Nelson
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
I. J. Fritz
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
Get access

Abstract

Amorphous metal alloy films have been produced using a new technique. Nominally NiP alloys are made by dissociating mixtures of nickel carbonyl and phosphine using a radio-frequency discharge in either an argon or a hydrogen carrier gas. This process incorporates significant amounts of carbon and oxygen impurities into the film. A previously unreported relationship between the interatomic bonding involving these impurities and the electronic transport properties of the films is discussed in this paper. The bonding studies were carried out principally using Auger lineshape analysis. Transport properties measured included 4-terminal resistivities, Hall mobilities and carrier concentrations, and Seebeck coefficients. Covalent bonding of Ni with C or P with O is strongly correlated with high resistivity, mainly through a decrease in carrier density.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 47: Symposium C – Thin Films: The Relationship of Structure to Properties , 1985 , 135
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Hays, A. K., Mat. Res. Soc. Proc., 38, 337 (1985)CrossRefGoogle Scholar
2. Cullity, B. D., Elements of Diffraction, 2nd Edition, (Addison-Wesley, Reading, 1978) pp. 408–440.Google Scholar
3. Handbook of Auger Electron Spectroscopy, 2nd Ed. (Phys. Elect. Ind. Inc., Eden Prairie, MN, 1976).Google Scholar
4. Craig, S., Harding, G. L., and Payling, R., Surf. Sci., 121, 591 (1983).CrossRefGoogle Scholar
5. Smith, M. A., Sinharoy, S., and Levenson, L. L., J.Vac. Sci. Technol., 16, 462 (1979).CrossRefGoogle Scholar
6. Smits, F. M., Bell Sys. Tech. J., 37, 711 (1958).CrossRefGoogle Scholar
7. van der Pauw, L. J., Philips Res. Rep., 13, 1 (1958).Google Scholar
8. N Cusack and Kendall, P., Proc. Phys. Soc., 72, 898 (1958)Google Scholar
9. Mooij, J. H., Phys. Stat. Sol. (a), 17, 521 (1973).CrossRefGoogle Scholar
10. Carini, J. P., Nagel, S. R., Varga, L. K. and Schmidt, T., Phys. Rev. B, 27, 7589 (1983).CrossRefGoogle Scholar