Hostname: page-component-7bb8b95d7b-2h6rp Total loading time: 0 Render date: 2024-10-06T01:37:47.514Z Has data issue: false hasContentIssue false
  • English
  • Français

The Relationship Between Crystal Structure and Performance as Optical Recording Media In Te-Ge-Sb Thin Films

Published online by Cambridge University Press:  15 February 2011

D. Strand ,
J. Gonzalez-Hernandez ,
B. S. Chao ,
S. R. Ovshinsky ,
P. Gasiorowski  and
D. A. Pawlik
D. Strand
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, MI 48084
J. Gonzalez-Hernandez
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, MI 48084
B. S. Chao
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, MI 48084
S. R. Ovshinsky
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, MI 48084
P. Gasiorowski
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, MI 48084
D. A. Pawlik
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, MI 48084
Get access

Abstract

The crystallization properties of Te-Ge and Te-Ge-Sb alloys prepared by thermal evaporation were analyzed using various characterization techniques. Similar to previous results, our data for Te-Ge shows that alloys that deviate slightly from Te50Ge50 stoichiometry show drastically slower crystallization kinetics. Raman spectroscopy and x-ray diffraction show that alloys having non-stoichiometric atomic ratios phase separate during crystallization into a Te50Ge50 phase plus pure crystalline tellurium or germanium. It is this relatively slow process of phase segregation which limits the crystallization rate. Phase segregation during crystallization of non-stoichiometric Te-Ge can be eliminated by adding antimony to samples having a tellurium concentration of from 45 to 55 atomic percent over a wide range of Ge:Sb ratios. These alloys can have laser induced crystallization times of less than 50 nsec. The thermal crystallization temperature is reduced only slightly when antimony is substituted for germanium.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 230: Symposium R – Phase Transformation Kinetics in Thin Films , 1991 , 251
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1]. Feinleib, J. and Ovshinsky, S.R., J. Non-Cryst. Sol. 4, 564 (1970).Google Scholar
[2]. Feinleib, J., deNeufville, J., Moss, S.C., and Ovshinsky, S.R., Appl. Phys. Lett. 18, 254 (1971).Google Scholar
[3]. Chen, M., Rubin, K.A., and Barton, R.W., Appl. Phys. Lett. 49, 502 (1986).Google Scholar
[4]. Yamada, N., Ohno, E., Nishiuchi, K., Akahira, N. and Takao, M., J. Appl. Phys. 69, 2489 (1991).Google Scholar
[5]. Rubin, K.A., Barton, R.W., Chen, M., Jipson, V.B., and Rugar, D., Appl. Phys. Lett. 50, 1488 (1987).Google Scholar
[6]. Gonzalez-Hernandez, J., Chao, B.S., Strand, D., Ovshinsky, S.R., Gasiorowsky, P. and Pawlik, D.A., unpublished.Google Scholar