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Relation between Growth Precursors and Film Properties for Plasma Deposition of a-Si:H at Rates up to 100 Å/s

Published online by Cambridge University Press:  17 March 2011

W.M.M. Kessels ,
A.H.M. Smets ,
J.P.M. Hoefnagels ,
M.G.H. Boogaarts ,
D.C. Schram  and
M.C.M. van de Sanden
W.M.M. Kessels
Affiliation:
Dept. of Applied Physics, Center for Plasma Physics and Radiation Technology, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
A.H.M. Smets
Affiliation:
Dept. of Applied Physics, Center for Plasma Physics and Radiation Technology, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
J.P.M. Hoefnagels
Affiliation:
Dept. of Applied Physics, Center for Plasma Physics and Radiation Technology, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
M.G.H. Boogaarts
Affiliation:
Dept. of Applied Physics, Center for Plasma Physics and Radiation Technology, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
D.C. Schram
Affiliation:
Dept. of Applied Physics, Center for Plasma Physics and Radiation Technology, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
M.C.M. van de Sanden
Affiliation:
Dept. of Applied Physics, Center for Plasma Physics and Radiation Technology, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
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Abstract

From investigations on the SiH3 and SiH radical density and the surface reaction probability in a remote Ar-H2-SiH4 plasma, it is unambiguously demonstrated that the a-Si:H film quality improves significantly with increasing contribution of SiH3 and decreasing contribution of very reactive (poly)silane radicals. Device quality a-Si:H is obtained at deposition rates up to 100 Å/s for conditions where film growth is governed by SiH3 (contribution ∼90%) and where SiH has only a minor contribution (∼2%). Furthermore, for SiH3 dominated film growth the effect of the deposition rate on the a-Si:H film properties with respect to the substrate temperature is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A4.2
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

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