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Regrowth of Damaged Layers in Diamond Produced by Ion Implantation

Published online by Cambridge University Press:  26 February 2011

G. S. Sandhu ,
B. Liu ,
N. R. Parikh ,
J. D. Hunn ,
M. L. Swanson ,
Th. Wichert ,
M. Deicher ,
H. Skudlik ,
W. N. Lennard  and
I. V. Mitchell
G. S. Sandhu
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599-3255
B. Liu
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599-3255
N. R. Parikh
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599-3255
J. D. Hunn
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599-3255
M. L. Swanson
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599-3255
Th. Wichert
Affiliation:
University of Konstanz, Konstanz, FRG
M. Deicher
Affiliation:
University of Konstanz, Konstanz, FRG
H. Skudlik
Affiliation:
University of Konstanz, Konstanz, FRG
W. N. Lennard
Affiliation:
University of Western Ontario, London, Ontario, Canada.
I. V. Mitchell
Affiliation:
University of Western Ontario, London, Ontario, Canada.
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Abstract

We have used RBS/Channeling, perturbed angular correlation (PAC) and optical absorption to study the regrowth of disordered layers in diamond produced by implantation with carbon, or with carbon plus boron or indium ions. For C or C plus B implantation doses of 2 ×1015 cm−2 or less, complete recovery of channeling damage occurred after RTA at 1100°C or furnace annealing at 900°C. Optical measurements on samples implanted with high energy carbon ions show better recovery compared to the shallower implantations. PAC results showed that co-implantation with C and In caused a considerable fraction (∼15%) of the In-atoms to occupy well-defined lattice sites characterized by an electric field gradient having its major component along <111>, and a frequency of 116 MHz.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 189
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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