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Reflectance-Difference Spectroscopy: a New Real-Time, In-Situ Analysis of MBE and OMCVD Growth Surfaces.

Published online by Cambridge University Press:  26 February 2011

E. Colas ,
D.E. Aspnes ,
R. Bhat ,
A.A. Studna ,
M.A. Koza  and
V.G. Keramidas
E. Colas
Affiliation:
Bellcore, Red Bank, NJ 07701-7040
D.E. Aspnes
Affiliation:
Bellcore, Red Bank, NJ 07701-7040
R. Bhat
Affiliation:
Bellcore, Red Bank, NJ 07701-7040
A.A. Studna
Affiliation:
Bellcore, Red Bank, NJ 07701-7040
M.A. Koza
Affiliation:
Bellcore, Red Bank, NJ 07701-7040
V.G. Keramidas
Affiliation:
Bellcore, Red Bank, NJ 07701-7040
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Abstract

Reflectance-difference spectroscopy (RDS) is a recently developed optical technique that allows to monitor chemical and structural changes at a growing semiconductor surface, in-situ and in real-time. This technique was applied recently to organometallic chemical vapor deposition (OMCVD) on a [100] GaAs growth surface. The results show that submonolayer coverage of reacted species can be followed by this technique, which provided unique insights into the microscopic growth mechanisms. The time, temperature and pressure dependences of surface coverage show that OMCVD growth is controlled by two basic processes with distinct activation energies, i.e. reversible chemisorption (at -26 kcal/mole), and decomposition (at 39 kcal/mole) of trimethylgallium (TMG) at surface lattice sites. The importance of reversible chemisorption, which is of an excluded-volume type, due to the large size of the TMG molecule, had been overlooked until now in the literature, where only one activation energy was used to describe growth kinetics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 103
Copyright
Copyright © Materials Research Society 1989

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References

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