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Published online by Cambridge University Press: 22 February 2011
Silicon surfaces cleaned using standard wet chemical processes used in silicon device fabrication have been characterised by two optical techniques, spectroscopic ellipsometry (SE) and reflectance anisotropy spectrometry (RAS). Standard peroxide-based Si(100) wafer cleans were studied by SE. It is demonstrated that the residual film on the Si surface is critically dependent on both the sequence and type of cleaning steps performed. The sensitivity of RAS performed on-line under an air ambient to HF etched Si(110) and 4° off axis Si(100) surfaces is evaluated in comparison with kinetic SE data.