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Re-Examining The Physical Basis of Pattern Density and Step Height CMP Models

Published online by Cambridge University Press:  01 February 2011

Xiaolin Xie ,
Tae Park ,
Brian Lee ,
Tamba Tugbawa ,
Hong Cai  and
Duane Boning
Xiaolin Xie
Affiliation:
Microsystems Technology Laboratories, MIT 60 Vassar St, Bldg 39-567, Cambridge, MA 02139
Tae Park
Affiliation:
Microsystems Technology Laboratories, MIT 60 Vassar St, Bldg 39-567, Cambridge, MA 02139
Brian Lee
Affiliation:
Microsystems Technology Laboratories, MIT 60 Vassar St, Bldg 39-567, Cambridge, MA 02139
Tamba Tugbawa
Affiliation:
Microsystems Technology Laboratories, MIT 60 Vassar St, Bldg 39-567, Cambridge, MA 02139
Hong Cai
Affiliation:
Microsystems Technology Laboratories, MIT 60 Vassar St, Bldg 39-567, Cambridge, MA 02139
Duane Boning
Affiliation:
Microsystems Technology Laboratories, MIT 60 Vassar St, Bldg 39-567, Cambridge, MA 02139
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Abstract

Our group has proposed several chip-scale CMP models, with key assumptions including the notion of planarization length in the pattern density model [1], and step height dependent polishing rate in the density step height model [2]. In the effective density model, planarization length is the characteristic length of an elliptic weighting function based on the long-range pad deformation and pressure distribution during CMP. This semi-physical model is often adequate and usually gives a fitting error of a few hundred angstroms. As ever-shrinking device size pushes for tighter control of post CMP uniformity, however, we need a chip-scale CMP model with better accuracy.

In this work, we re-examine the physical basis for averaging weighting functions and step height dependence, particularly in the context of contact mechanics based model formulations. The comparison of the two models confirms that the analytical density and step height models can be viewed as approximations to the contact wear model. The study also suggests a new dependence of contact height on line space and pattern density.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 767: Symposium F – Chemical-Mechanical Planarization , 2003 , F1.3
Copyright
Copyright © Materials Research Society 2003

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References

[1] Ouma, D. O. Boning, D. S. Chung, J. E. Easter, W. G. Saxena, V. Misra, S. and Crevasse, A. “Characterization and Modeling of Oxide Chemical Mechanical Polishing Using Planarization Length and Pattern Density Concepts,” IEEE Trans. Semiconduct. Manufact., vol. 15, no. 2, pp. 232–244, May 2002.Google Scholar
[2] Tugbawa, T. Park, T. Lee, B. Boning, D. Lefevre, P. and Camilletti, L. “Modeling of Pattern Dependencies for Multi-Level Copper Chemical-Mechanical Polishing Processes,” Materials Research Society (MRS) Spring Meeting, San Francisco, CA, April 2001.Google Scholar
[3] Dornfeld, D. “Mechanical Aspects of CMP,” Proc. VMIC Conf., pp. 105–112, June 2000.Google Scholar
[4] Chekina, O. G. Keer, L. M., and Liang, H. “Wear-contact problems andmodeling of chemical mechanical polishing,” J. Electrochem. Soc., vol. 145, no. 6, pp. 2100–2106, June 1998. 2000.Google Scholar
[5] Yoshida, T. Proc. ECS Conf., Oct. 1999.Google Scholar
[6] Stine, B. Ouma, D. Divecha, R. Boning, D. Chung, J. Hetherington, D. Ali, I. Shinn, G. Clark, J., Nakagawa, O. S. and Oh, S.-Y., “A closed-form analytic model for ILD thickness variation in CMP processes,” Proc. CMP-MIC Conf., Santa Clara, CA, pp. 266–273, Feb. 1997.Google Scholar
[7] Stine, B. Ouma, D. Divecha, R. Boning, D. Chung, J. Hetherington, D. Harwood, C. R. Nakagawa, O. S., and Oh, S.-Y., “Rapid characterization and modeling of pattern dependent variation in chemical mechanical polishing,” IEEE Trans. Semiconduct. Manufact., vol. 11, pp. 129–140, Feb. 1998.Google Scholar
[8] Vlassak, J. J. “A contact-mechanics based model for dishing and erosion in chemicalmechanical polishing,” Material Research Society (MRS) Spring Meeting, 2001.Google Scholar