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Reduction of the Defect Density in a-Si:H Deposited at ≤250°C

Published online by Cambridge University Press:  01 January 1993

Hitoshi Nishio ,
Gautam Ganguly  and
Akihisa Matsuda
Hitoshi Nishio
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, lbaraki,305 Japan
Gautam Ganguly
Affiliation:
Kaneka Corp., 1-2-80 Yoshida-cho,Hyogo-ku, Kobe, Hyogo, 652 Japan.
Akihisa Matsuda
Affiliation:
Kaneka Corp., 1-2-80 Yoshida-cho,Hyogo-ku, Kobe, Hyogo, 652 Japan.
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Abstract

We present a method to reduce the defect density in hydrogenated amorphous silicon (a-Si:H) deposited at low substrate temperatures similar to those used for device fabrication . Film-growth precursors are energized by a heated mesh to enhance their surface diffusion coefficient and this enables them to saturate more surface dangling bonds.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 91
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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