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Reduction of incorporation of B, Al, Ti and N in 4H-SiC epitaxial-layer grown by chemical vapor deposition at higher growth temperature

Published online by Cambridge University Press:  21 March 2011

Mitsuhiro Kushibe ,
Koh Masahara ,
Kzutoshi Kojima ,
Tshiyuki Ohno ,
Yuki Ishida ,
Tetsuo Takahashi ,
Johji Nishio ,
Takaya Suzuki ,
Tomoyuki Tanaka  and
Sadahumi Yoshida
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Mitsuhiro Kushibe
Affiliation:
Ultra-Low-Loss Power Device Technology Research Body 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Koh Masahara
Affiliation:
Ultra-Low-Loss Power Device Technology Research Body 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Kzutoshi Kojima
Affiliation:
Ultra-Low-Loss Power Device Technology Research Body 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Tshiyuki Ohno
Affiliation:
Ultra-Low-Loss Power Device Technology Research Body 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Yuki Ishida
Affiliation:
Ultra-Low-Loss Power Device Technology Research Body 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Tetsuo Takahashi
Affiliation:
Ultra-Low-Loss Power Device Technology Research Body 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Johji Nishio
Affiliation:
Ultra-Low-Loss Power Device Technology Research Body 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Takaya Suzuki
Affiliation:
Ultra-Low-Loss Power Device Technology Research Body 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Tomoyuki Tanaka
Affiliation:
Ultra-Low-Loss Power Device Technology Research Body 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Sadahumi Yoshida
Affiliation:
Ultra-Low-Loss Power Device Technology Research Body 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Kazuo Arai
Affiliation:
Ultra-Low-Loss Power Device Technology Research Body 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Abstract

The influence of growth conditions and susceptor purity on the residual contamination in undoped 4H-SiC epitaxial layer grown at higher temperature such as 1600 °C is investigated. Residual N concentration is found to increase with growth temperature. Growth temperature dependence of residual N concentration is stronger than that of Al or B. The effect of degradation of SiC coating layer on the purity of the epitaxial layer is studied. SiC coating layer is degraded after very few repetition of growth-run. SIMS measurement reveals that the concentration of N, Al, B, Ti and V in epitaxial layer increases with the deterioration of SiC coating layer. Therefore, serious consideration on the effect of contamination from the susceptor graphite is required. By using various grades of graphite as susceptor, the dependence of the purity of epitaxial layer on the susceptor purity is studied. High concentration (1017 to 1018 cm−3) of N is found in graphite. Contamination of all types of impurities such as p-type impurities, transition metal impurities and N in graphite is found to affect the purity of epitaxial layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 680: Symposium E – Wide Bandgap Electronics , 2001 , E3.9
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

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