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Reduction of Defect Density in Heteroepitaxial GexSi1-x Grown on Patterned Si Substrates

Published online by Cambridge University Press:  28 February 2011

E.A. Fitzgerald ,
Y.-H. Xie ,
J. Michel ,
P.E. Freeland  and
B.E. Weir
E.A. Fitzgerald
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
Y.-H. Xie
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. Michel
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
P.E. Freeland
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
B.E. Weir
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

We have investigated the molecular beam epitaxial growth of GexSi1-x on small growth areas patterned in Si substrates. Electron beam induced current, etch-pit density measurements, transmission electron microscopy, and photoluminescence were used to compare dislocation densities in GexSi1-x on patterned and unpattemed substrates. We find a dramatic reduction in both misfit and threading dislocation densities for the patterned substrate growth. Our results also show that dislocation introduction is dominated by heterogeneous nucleation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 59
Copyright
Copyright © Materials Research Society 1990

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