Hostname: page-component-6bf8c574d5-7jkgd Total loading time: 0 Render date: 2025-02-18T07:00:14.239Z Has data issue: false hasContentIssue false
  • English
  • Français

Redistribution of Boron Implanted into TaSi2/Poly-Si Gates

Published online by Cambridge University Press:  22 February 2011

U. Schwalke ,
C. Mazure  and
F. Neppl
U. Schwalke
Affiliation:
Siemens AG, Corporate Research and Development, Microelectronics, Otto-Hahn-Ring 6, D-8000 Munich 83, FRG
C. Mazure
Affiliation:
Siemens AG, Corporate Research and Development, Microelectronics, Otto-Hahn-Ring 6, D-8000 Munich 83, FRG
F. Neppl
Affiliation:
Siemens AG, Corporate Research and Development, Microelectronics, Otto-Hahn-Ring 6, D-8000 Munich 83, FRG
Get access

Abstract

The redistribution of boron implanted into TaSi2/poly-Si gates after high temperature anneals has been studied as a function of the implantation dose and energy as well as implantation scheme, i.e. boron implantation either into the silicide or into the poly-Si prior to TaSi2 deposition. SIMS measurements indicate that boron can easily diffuse from TaSi2 into poly-Si and vice versa at 900 °C. Independent of the implantation scheme, the boron concentration within poly-Si was found to saturate at approximately 1 × 1019 at/cm3 for boron doses greater than 5 × 1014 at/cm2. The excess of boron always accumulates within the silicide. The observed boron redistribution behavior within polycrystalline TaSi2/poly-Si layers is discussed in terms of combined lattice and grain boundary diffusion as well as grain boundary segregation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 106: Symposium G – Polysilicon Films and Interfaces , 1987 , 187
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Schwabe, U., Neppl, F. and Jacobs, E.P., IEEE Trans. Electron. Devices, 31 (7), 988 (1984).CrossRefGoogle Scholar
2. Gierisch, H., Neppl, F., Frenzel, E., Eichinger, P. and Hieber, K., J. Vac. Sci. Technol., B 5, 508 (1987).Google Scholar
3. Eichinger, P., Frenzel, E. and Neppl, F., Mat. Res. Soc. Proc., 25, 165 (1984).CrossRefGoogle Scholar
4. Schwalke, U., Mazure, C. and Neppl, F., to be published in J. Vac. Sci. Technology B.Google Scholar
5. Russwurm, W., Philipsborn, H. v., Göbel, H.E. and Neppl, F.in ACTA CRYSTALLOGRAPHICA, Vol. A40 suppl., p. 188, 1984.CrossRefGoogle Scholar
6. Davis, G.D. and Natan, M., J. Vac. Sci. Technol. A 4, 159 (1986).CrossRefGoogle Scholar
7. Mandurah, M.M., Saraswat, K.C. and Helms, C.R., J. Appl. Phys. 51, 5755 (1981).Google Scholar
8. Schaber, H.C., Criegern, R.v. and Weitzel, I., J. Appl. Phys., 58, 4036 (1985).Google Scholar