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Recrystallization Kinetics During Fast Thermal Annealing of Pfn+ Implanted Silicon+

Published online by Cambridge University Press:  26 February 2011

W. O. Adekova ,
J. C. Muller ,
P. Siffert  and
L. Pedulli
W. O. Adekova
Affiliation:
C.R.N. - PHASE, B.P. 20, F-67037 STRASBOURG Cedex (FRANCE)
J. C. Muller
Affiliation:
C.R.N. - PHASE, B.P. 20, F-67037 STRASBOURG Cedex (FRANCE)
P. Siffert
Affiliation:
C.R.N. - PHASE, B.P. 20, F-67037 STRASBOURG Cedex (FRANCE)
L. Pedulli
Affiliation:
Consiglio Nazionale delle Richerche, Instituto LAMEL, Via Castagnoli 1, 1 40126 BOLOGNA (ITALY).
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Abstract

The damage recovery and electrical activation of PFn+ (1 ≤n ⩽,5) implanted silicon layers during fast thermal annealing has been investigated. The <100> oriented wafers were implanted by glow discharge with 30 keV PFn+ ions at a dose of 2.5–3.1015 ions/cm2 and subsequently annealed using incoherent light pulses in the temperature range 600–1100°C with irradiation times of 1–15 secs.

Our results show that the maximum electrical activity is obtained by about 750°C, 15 sec and the same activity is reached for shorter annealing times and higher temperatures (typically 820°/ 5 sec; 950°C / 1 sec). These values and Rutherford Backscattering analysis reveal that the velocity of regrowth of the PFn+-implantation amorphized layer is lower than in the case of P+ implantation and that the former requires a higher activation energync≃3.4 eV.

TEM analysis reveals precipitates in 820°C/4 s annealed samples with the appearance of dislocation loops at 980°C/4 s annealing. Finally two characterizable defect levels (ETT = EV + 180 meV, ET2 = EV + 542 meV) are seen to remain in the PFn+ implanted samples examined by DLTS, even after annealing at 1100°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 52: Symposium B – Rapid Thermal Processing , 1985 , 115
Copyright
Copyright © Materials Research Society 1986

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