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Recombination Process in the As-Deposited State of Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  01 January 1993

Jong-Hwan Yoon
Jong-Hwan Yoon*
Affiliation:
Department of Physics, College of Natural Science, Kangwon National University, Chunchon, Kangwon-Do 200-701, Korea.
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Abstract

Intrinsic deep defect-related recombination process has been studied in a series of undoped hydrogenated amorphous silicon(a-Si:H) films grown under different deposition conditions. Steady-state photoconductivity (σph) was measured as a function of deep defect density Nd, Urbach energy Eu, and dark Fermi energy Ef. It was found that σph strongly depends on these parameters while Ef- stays at the energy levels lower than 0.82 eV below Ec, but it is nearly independent of those while Ef stays at above 0.82 eV. These behaviors were found to be independent of the sample deposition conditions. These results indicates that subgap defect states enclosed by E=0.82 eV and Ef are the dominant recombination centers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 455
Copyright
Copyright © Materials Research Society 1993

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References

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