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Recombination of Localized Excitons in InGaN Single- and Multiquantum-Well Structures

Published online by Cambridge University Press:  10 February 2011

S. Chichibu ,
T. Azuhata ,
T. Sota  and
S. Nakamura
S. Chichibu
Affiliation:
Faculty of Science and Technology, Science University of Tokyo, 2641 Yamazaki, Noda, Chiba 278, addr-lineJapan
T. Azuhata
Affiliation:
Department of Electrical, Electronics, and Computer Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku, Tokyo 169, Japan
T. Sota
Affiliation:
Department of Electrical, Electronics, and Computer Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku, Tokyo 169, Japan
S. Nakamura
Affiliation:
Department of Research and Development, Nichia Chemical Industries Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
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Abstract

Spontaneous emission mechanisms of InGaN single quantum well (SQW) blue and green light emitting diodes (LEDs) and multiquantum well (MQW) laser diode (LD) structures were investigated. Their static electroluminescence (EL) peak was assigned to the recombination of excitons localized at certain potential minima in the quantum well (QW). The transmission electron micrographs (TEM) indicated fluctuation of In molar fraction in the QWs. The blueshift of the EL peak caused by the increase of the driving current was explained by combined effects of the quantum-confinement Stark effect and band filling of the localized states by excitons.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 653
Copyright
Copyright © Materials Research Society 1997

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References

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