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Recombination dynamics in ultraviolet light-emitting diodes with Si-doped AlxGa1−xN/AlyGa1−yN multiple quantum well active regions

Published online by Cambridge University Press:  01 February 2011

Kaixuan Chen ,
Y. A. Xi ,
F. W. Mont ,
J. K. Kim ,
E. F. Schubert ,
X. Li ,
W. Liu  and
J. A. Smart
Kaixuan Chen
Affiliation:
[email protected], Rensselaer Polytechnic Institute, Future Chips Constellation and Department of Physics, CII 7219, 110 8th Street, Troy, NY, 12180, United States, 5189611905, 5182768042
Y. A. Xi
Affiliation:
[email protected], Rensselaer Polytechnic Institute, Future Chips Constellation and Dept. Physics, 110 8th Street, Troy, NY, 12180, United States
F. W. Mont
Affiliation:
[email protected], Rensselaer Polytechnic Institute, Future Chips Constellation and Dept. Electrical, Computer, and Systems Engineering, 110 8th Street, Troy, NY, 12180, United States
J. K. Kim
Affiliation:
[email protected], Rensselaer Polytechnic Institute, Future Chips Constellation and Dept. Electrical, Computer, and Systems Engineering, 110 8th Street, Troy, NY, 12180, United States
E. F. Schubert
Affiliation:
[email protected], Rensselaer Polytechnic Institute, Future Chips Constellation, Dept. Physics and Dept. Electrical, Computer, and Systems Engineering, 110 8th Street, Troy, NY, 12180, United States
X. Li
Affiliation:
[email protected], Crystal IS, Inc., 70 Cohoes Avenue, Green Island, NY, 12183, United States
W. Liu
Affiliation:
[email protected], Crystal IS, Inc., 70 Cohoes Avenue, Green Island, NY, 12183, United States
J. A. Smart
Affiliation:
[email protected], Crystal IS, Inc., 70 Cohoes Avenue, Green Island, NY, 12183, United States
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Abstract

Ultraviolet light-emitting diodes (UV LEDs) with AlxGa1−xN/AlyGa1−yN multiple quantum well (MQW) active regions, doped in the barriers with different Si doping level, show a sharp near band-edge emission (UV luminescence). Besides the near band-edge emission, some samples also show parasitic emissions with a broad peak centered at about 520 nm (green luminescence). The EL intensities of the UV emission line and the green emission line are studied. The UV luminescence peak intensity increases superlinearly with the injection current, following a power law with an exponent of about 2.0. In contrast, the green luminescence peak intensity increases linearly with the injection current, with an exponent of about 1.0. A theoretical model is proposed to explain the relationship between the peak intensities and the injection current. The results obtained from the model are in excellent agreement with the experimental results. The model provides a method to evaluate the dominant recombination process by measuring the exponent of the power-law dependence.

Keywords

metalorganic depositionnitrideIII-V
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I07-07
Copyright
Copyright © Materials Research Society 2007

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References

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