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Recombination at Heterojunction Interfaces

Published online by Cambridge University Press:  22 February 2011

M. Müllenborn  and
N. M. Haegel
M. Müllenborn
Affiliation:
Department of Materials Science & Engineering, University of California at Los Angeles, Los Angeles, CA 90024
N. M. Haegel
Affiliation:
Department of Materials Science & Engineering, University of California at Los Angeles, Los Angeles, CA 90024
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Abstract

Generation and recombination mechanisms at heterojunction interfaces are quantitatively discussed for lattice-matched (AlGaAs/GaAs) and lattice-mismatched (InGaAs/InP) systems. The effect of increased interface recombination on photon recycling and carrier diffusion through the interface region are estimated through a calculation based on the ambipolar diffusion equation. Experimental photoluminescence power dependencies, revealing information about generation and recombination mechanisms, fit well with calculated photoluminescence intensities. Lifetimes and interface extent can be determined by these fits.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 300: Symposium D1 – III-V Electronic and Photonic Device Fabrication and Performance , 1993 , 139
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Bode, M. H. and Ourmazd, A., J. Vac. Sci. Technol. B 10, 1787 (1992).Google Scholar
2. Bimberg, D., Heinrichsdorff, F., Bauer, R. K., Gerthsen, D., Stenkamp, D., Mars, D. E., and Miller, J. N., J. Vac. Sci. Technol. B 10, 1793 (1992).Google Scholar
3. Salemink, H. W. M. and Albrektsen, O., J. Vac. Sci. Technol. B 10, 1799 (1992).Google Scholar
4. Ahrenkiel, R. K., Keyes, B. M., and Dunlavy, D. J., J. Appl. Phys. 70, 225 (1991).Google Scholar
5. Renaud, Ph., Raymond, F., Bensaid, B., and Vérié, C., J. Appl. Phys. 71, 1907 (1992).Google Scholar
6. Mullenborn, M. and Haegel, N. M. in Advanced III-V Compound Semiconductor Growth, Processing and Devices, edited by Pearton, S. J., Sadana, D. K., and Zavada, J. M. (Mater. Res. Soc. Proc. 240, Pittsburgh, PA, 1991) pp. 93–98.Google Scholar
7. Bradshaw, J. L., Choyke, W. J., Devaty, R. P., and Messham, R. L., J. Appl. Phys. 67, 1483 (1990).Google Scholar
8. Miullenborn, M. and Haegel, N. M., submitted to J. Appl. Phys. in Dec. 92.Google Scholar