Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-04T19:35:14.541Z Has data issue: false hasContentIssue false
  • English
  • Français

Real-Time X-Ray Topographic Observation of Melting and Growth of Silicon Crystals

Published online by Cambridge University Press:  15 February 2011

Jun-Ichi Chikawa  and
Fumio Sato
Jun-Ichi Chikawa
Affiliation:
NHK Broadcasting Science Research Laboratories, 1–10–l1, Kinuta, Setagaya-ku, Tokyo, 157, Japan
Fumio Sato
Affiliation:
NHK Broadcasting Science Research Laboratories, 1–10–l1, Kinuta, Setagaya-ku, Tokyo, 157, Japan
Get access

Abstract

A technique for the direct viewing of topographic images was developed based on a television system using an x-ray sensing PbO-vidicon camera tube (resolution 25 μm). Melting and growth processes of plate-shaped crystals were observed in an argon flow by this technique. The observation showed that dislocations have very high mobilities by superheating and the equilibrium dislocation density of zero is achieved just before melting. In melting of dislocation-free crystals, liquid drops (locally molten regions) were observed inside the crystals. While, crystallites appeared in the supercooled melt near the growth interface. It was found that both the drops and crystallites are not formed in 5% hydrogen/95% argon environment. Melting behavior of crystals covered with oxide films indicates that the solid-liquid interfacial free energy is greatly lowered by oxygen impurity. This oxygen effect may be responsible for both the drop and crystallite formation. Origin of swirl defects in dislocation-free crystals is discussed in the basis of these observations. Both composite and common a/2<110> dislocations were observed near the growth interface: The former are composed of three a/2<110> dislocations and are present at the interface so that, as the crystal grows, they propagate into the new crystal. They influence the interface morphology, when their Burgers vectors have the component perpendicular to the interface. The common dislocations cannot exist stably at the interface and are driven into the newly grown dislocation-free region by thermal stresses.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 317
Copyright
Copyright © Materials Research Society 1981

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Glicksman, M.E. in: Solidification, Hughel, T.J., Bolling, G.F. Eds. (American Society for Metals, Metal Park 1970) pp. 155–200.Google Scholar
2. Champier, G. in: The Characterization of Crystal Growth Defects by X-Ray Methods (Plenum, New York 1980) to be publishedGoogle Scholar
3. Klapper, H. in Ref. [2]Google Scholar
4. Chikawa, J. and Fujimoto, I., Appl. Phys. Lett. 13, 387 (1968).Google Scholar
5. Hartmann, W. in: X-Ray Optics, Queisser, H. -J. ed. (Springer-Verlag, New York, 1977) pp. 191–217.Google Scholar
6. Chikawa, J. in Ref. [2]Google Scholar
7. Lang, A. R. in: Modern Diffraction and Imaging Techniques in Material Science, Amelinckx, S., Gevers, R., Remaut, G, Van Landuyt, J. eds. (North-Holland, Amsterdam 1970) pp. 407–479.Google Scholar
8. For example, see Heynes, G.D., SMPTE Journal 86, 6 (1977).Google Scholar
9. McMann, R.H. et al. , SMPTE Journal 87, 129 (1978)Google Scholar
10. Rossi, J., SMPTE Journal 87, 134 (1978).CrossRefGoogle Scholar
11. Nishida, R. and Okamoto, S., Rept. Res. Inst. Electron. Shizuoka Univ. 1, 21, 185 (1966).Google Scholar
12. Kato, N., Acta Cryst. 14, 526, 627 (1961).Google Scholar
13. Chikawa, J. and Sato, F. in: Proceedings of 1lth International Conference on Defects and Radiation Effects in Semiconductors, To be published.Google Scholar
14. Abe, T., J. Cryst. Growth 24/25, 463 (1974)Google Scholar
15. Voronkov, V.V., Kristallografiya 17, 909 (1972),Google Scholar
Soviet Physics-Crystallo Crystallography 17, 807 (1973).Google Scholar
16. For example, see Chalmers, B., Principles of Solidification (John Wiley & Sons, New York 1964) pp. 65–76.Google Scholar
17. Chikawa, J. and Shirai, S., J. Cryst. Growth 39, 328 (1977).Google Scholar
18. de Kock, A.J.R., in : 1976 Crystal Growth and Materials eds. Kaldis, E. and Scheel, H.J. (North-Holland) (1977) pp. 662–703 Google Scholar
19. Chikawa, J. and Shirai, S., Jpn. J. Appl. Phys. 18, Suppl. 18–1, 153 (1979).CrossRefGoogle Scholar
20. Föll, H. et al. , J. Cryst. Growth 40, 90 (1977).CrossRefGoogle Scholar
21. Yatsurugi, Y. et al. , J. Electrochem. Soc. 120, 975 (1973).CrossRefGoogle Scholar
22. Föll, H. and Kolbesen, B.O.: Appl. Phys. 8, 319 (1975).CrossRefGoogle Scholar
23. For example, see Patel, J.R., in: Semiconductor Silicon 1977, Huff, H.R., Sirtl, E. eds. (Electrochemical Society, Princeton, N.J. 1977) pp. 521–545.Google Scholar
24. Seki, Y. et al. , J. Appl. Phys. 49, 822 (1978).Google Scholar
25. Chikawa, J. and Sato, F., Jpn. J. Appl. Phys. 19, L577 (1980).Google Scholar