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Real-time x-ray scattering study of homoepitaxial growth of SrTiO3 by sputtering

Published online by Cambridge University Press:  11 February 2011

Hsin-Yi Lee ,
C.-H. Hsu ,
Y.-W. Hsieh  and
K. S. Liang
Hsin-Yi Lee
Affiliation:
National Synchrotron Radiation Research Center, Hsinchu 30077, Taiwan
C.-H. Hsu
Affiliation:
National Synchrotron Radiation Research Center, Hsinchu 30077, Taiwan
Y.-W. Hsieh
Affiliation:
National Synchrotron Radiation Research Center, Hsinchu 30077, Taiwan
K. S. Liang
Affiliation:
National Synchrotron Radiation Research Center, Hsinchu 30077, Taiwan
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Abstract

The real-time x-ray scattering measurements under in-situ sputtering conditions were employed to study the growth behavior of sputter-deposited SrTiO3 films on SrTiO3 (001) substrate. A condition for conformal growth between deposited layers and substrate was found by observing the oscillation fringe in the diffuse scattering of measured reflectivity. The azimuthal scan around surface Bragg peak of the film peak shows that the epitaxial relationship between film and substrate can be achieved by sputtering.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 749: Symposium W – Morphological and Compositional Evolution of Thin Films , 2002 , W17.14
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1 Abe, Y., Kawamura, M. and Sasaki, K., Jpn. J. Appl. Phys., Part 1 36 5175, (1998).Google Scholar
2 Ryen, L., Wang, X., Helmersson, U., and Olsson, E., J. Appl. Phys. 85, 2828 (1999).Google Scholar
3 Lyons, K. B. and Fleury, P.A., Solid State Commun. 23, 477 (1977).Google Scholar
4 Viana, R., Lunkenheimer, P., Hemberger, J., Bühmer, R., and Loidl, A., Phys. Rev. B 50, 601 (1994).Google Scholar
5 Suzuki, H., Bando, H., Otuka, Y., and Inoue, I. H., J. Phys. Soc. Jpn. 65, L1529 (1996).Google Scholar
6 Tabata, H., Tanaka, H., and Kawai, T., Appl. Phys. Lett. 65, 1970 (1994).Google Scholar
7 Guo, S., Arwin, H., Jacobsen, S. N., Järrendahl, K., and Helmersson, U., J. Appl. Phys. 77, 5369 (1995).Google Scholar
8 Lee, J. Y., Juang, J. Y., Wu, K. H., Uen, T. M., and Gou, Y. S., Surf. Sci. Lett. 449, (1–3) L235 (2000).Google Scholar
9 Juang, J. Y., Lee, J. Y., Chen, Y. F., Wu, K. H., Uen, T. M., and Gou, Y. S., Physica B. 284–288, (1–4) 2099 (2000)Google Scholar
10 Lee, Hsin-Yi, Chang, Wei-Der, Hsu, C.-H., Liang, K. S., Lee, J.Y., Juang, J.Y., Wu, K.H., Uen, T.M., and Gou, Y.S., Thin solid films 418, 163 (2002).Google Scholar
11 Jiang, J. C., Pan, X. Q., Tian, W., Theis, C. D., and Schlom, D. G., Appl. Phys. Lett. 74, 2851 (1999).Google Scholar
12 Lippmaa, M., Nakagawa, N., Kawasaki, M., Ohashi, S., and Koinuma, H., Appl. Phys. Lett. 76, 2439 (2000).Google Scholar
13 Aarts, J. and Larsen, P. K., Surf. Sci. 188, 391 (1987).Google Scholar
14 van der Vegt, H. A., van Pixteren, H. M., Lohmeier, M., Vlieg, E., and Thornton, J. M. C., Phys. Rev. Lett. 68, 3335 (1992).Google Scholar
15 van der Vegt, H. A., Alvarez, J., Torrelles, X., Ferrer, S., and Vlieg, E., Phys. Rev. B 52, 17 443 (1995).Google Scholar
16 Vlieg, E., Denier van der Gon, A. W., van der Veen, J. F., Macdonald, J. E., and Norris, C., Phys. Rev. Lett. 61, 2241 (1988).Google Scholar
17 van der Vegt, H. A., Huisman, W. J., Howes, P. B., Turner, T. S., and Vlieg, E., Surf. Sci. 365, 205 (1996).Google Scholar
18 Finney, M. S., Norris, C., Howes, P. B., and Vlieg, E., Surf. Sci. 277, 330 (1992).Google Scholar
19 Nicklin, C. L., Norris, C., Steadman, P., Taylor, J. S. G., and Howes, P. B., Physica B 221, 86 (1996).Google Scholar
20 Edwards, K. A., Howes, P. B., Macdonald, J. E., Hibma, T., Bootsma, T., and James, M. A., Physica B 221, 201 (1996).Google Scholar
21 Stephenson, G. B., Eastman, J. A., Thompson, C., Auciello, O., Thompson, L. J., Munkholm, A., Fini, P., DenBaars, S. P., and Speck, J. S., Appl. Phys. Lett. 74, 3326 (1999).Google Scholar
22 Stephenson, G. B., Eastman, J. A., Auciello, O., Munkholm, A., Thompson, C., Fuoss, P. H., Fini, P., DenBaars, S. P., and Speck, J. S., MRS BULLETIN. 24, 21 (1999).Google Scholar
23 Weschke, E., Schüβler-Langeheine, C., Meier, R., Kaindl, G., Sutter, C., Abernathy, D., and Grübel, G., Phys. Rev. Lett. 79, 3954 (1997).Google Scholar
24 Sinha, S. K., Physica B, 173, 25 (1991).Google Scholar
25 Sinha, S. K., Sirota, E. B., Garoff, S., and Stanley, H. B., Phys. Rev. B, 38, 2297 (1988).Google Scholar
26 Lee, H.-Y., et al., to be published.Google Scholar