Hostname: page-component-cd9895bd7-dzt6s Total loading time: 0 Render date: 2024-12-27T02:21:55.018Z Has data issue: false hasContentIssue false
  • English
  • Français

Real-Time Surface and Near-Surface Optical Diagnostics for Epitaxial Growth

Published online by Cambridge University Press:  22 February 2011

D. E. Aspnes
D. E. Aspnes*
Affiliation:
Department of Physics, NCSU, Raleigh, NC 27695-8202, USA
Get access

Abstract

Various optical diagnostics are being developed to meet new challenges in semiconductor epitaxy. New data-analysis algorithms allow near-surface alloy compositions and interface properties to be obtained by kinetic ellipsometry (KE) without any knowledge of the underlying sample structure. New information about growth is being obtained by surface-oriented probes such as laser light scattering (LLS), surface photoabsorption (SPA), anrd reflectance-difference (-anisotropy) spectroscopy (RDS/RAS). Examples are provided and likely directions of further progress discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 324: Symposium K – Diagnostic Techniques for Semiconductor Materials Processing , 1993 , 3
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. McGilp, J. F., J. Phys.: Condens. Matter 2, 7985 (1990).Google Scholar
2. Pidduck, A. J., Robbins, D. J., Cullis, A. G., Gasson, D. B., and Glasper, J. L., J. Electrochem. Soc. 136, 3083 (1989); A. J. Pidduck, D. J. Robbins, D. B. Gasson, C. Pickering, and J. L. Glasper, J. Electrochem. Soc. 136, 3088 (1989); C. Picketing, Thin Solid Films 206, 275 (1991); C. M. Rouleau and R. M. Park, J. Vac. Sci. Technol. All, 1792 (1993.Google Scholar
3. Horikoshi, Y., Yamaguchi, H., Briones, F., and Kawashima, M., J. Crystal Growth 105, 326 (1990).CrossRefGoogle Scholar
4. Celii, F. G., Beam, E. A. III, Files-Sesler, L. A., Liu, H.-Y., and Kao, Y. C., Appl. Phys. Lett. 62, 2705 (1993).CrossRefGoogle Scholar
5. Stehlin, T., Feller, M., Guyot-Sionnest, P., and Shen, Y. R., Optics Lett. 13, 389 (1988); M. E. Pemble, D. S. Buhaenko, S. M. Francis, P. A. Goulding, and J. T. Allen, J. Crystal Growth 107, 37 (1991); P. V. Kelly, J. D. O'Mahoney, J. F. McGilp, and Th. Rasing, Appl. Surface Sci. 56-58, 453 (1992).Google Scholar
6. Superfine, R., Guyot-Sionnest, P., Hunt, J. H., Kao, C. T., and Shen, Y. R., Surface Sci. 200, L445 (1988); Y. R. Shen, Nature 337, 519 (1989).Google Scholar
7. Chabal, Y. J., Higashi, G. S., Raghavachari, K., and Burrows, V. A., J. Vac. Sci. Technol. A7, 2104 (1989); P. E. Gees and R. F. Hicks, J. Vac. Sci. Technol. A10, 892 (1992).CrossRefGoogle Scholar
8. Selci, S., Ciccacci, F., Chiarotti, G., Chiaradia, P., and Cricenti, A., J. Vac. Sci. Technol. A5, 327 (1987); D. Eres and J. W. Sharp, Appl. Phys. Lett. 60, 2764 (1992).Google Scholar
9. Horikoshi, Y., Kawashima, M., and Kobayashi, N., J. Crystal Growth 111, 200 (1991); A. Usui, Thin Solid Films 225, 53 (1993).CrossRefGoogle Scholar
10. Kobayashi, N. and Kobayashi, Y., Thin Solid Films 225, 32 (1993).Google Scholar
11. Kobayashi, N. and Horikoshi, Y., J. Appl. Phys. Jpn. 29, L702 (1990); K. Nishi, A. Usui, and H. Sakaki, Appl. Phys. Lett. 61, 31 (1992).CrossRefGoogle Scholar
12. Nishi, K., Usui, A., and Sakaki, H., Thin Solid Films 225, 47 (1993).Google Scholar
13. Gautard, D., Laport, J. L., Cadoret, M., and Pariset, C., J. Cryst. Growth 71, 125 (1985); M. Gendry, J. Durand, M. Erman, J. B. Theeten, L. Nevot, and B. Pardo, Appl. Surface Sci. 44, 309 (1990); S. Andrieu and F. Arnaud d'Avitaya, J. Cryst. Growth 112, 146 (1991).Google Scholar
14. Aspnes, D. E., Harbison, J. P., Studna, A. A., and Florez, L. T., Phys. Rev. Lett. 59, 1687 (1987); G. Paulsson, K. Deppert, S. Jeppesen, J. J6nsson, L. Samuelson, and P. Schmidt, J. Cryst. Growth 111, 115 (1991); B. A. Joyce, J. Zhang, T. Shitara, J. H. Neave, A. Taylor, S. Armstrong, M. E. Pemble, and C. T. Foxon, J. Cryst. Growth 115, 338 (1991); V. L. Berkovits, V. N. Bessolov, T. N. L'vova, E. B. Novikov, V. I. Safarov, R. V. Khasieva, and B. V. Tsarenkov, J. Appl. Phys. 70, 3707 (1991).CrossRefGoogle Scholar
15. Acher, O., Koch, S. M., Omnes, F., Defour, M., Razeghi, M., and Drévillon, B., J. Appl. Phys. 68, 3564 (1990).Google Scholar
16. Kamiya, I., Aspnes, D. E., Tanaka, H., Florez, L. T., Harbison, J. P., and Bhat, R., Phys. Rev. Lett. 68, 627 (1992).CrossRefGoogle Scholar
17. Kamiya, I., Aspnes, D. E., Florez, L. T., and Harbison, J. P., Phys. Rev. B46, 15894 (1992).CrossRefGoogle Scholar
18. Aspnes, D. E., Kamiya, I., Tanaka, H., and Bhat, R., J. Vac. Sci. Technol. B10, 1725 (1992).Google Scholar
19. Deppert, K., Jinsson, J., and Samuelson, L., Thin Solid Films 224, 133 (1993).CrossRefGoogle Scholar
20. Wormeester, H., Wentink, D. J., Boeij, P. L. de, Wijers, C. M. J., and Silfhout, A. van, Phys. Rev. B47, 12664 (1993).Google Scholar
21. Reinhardt, F., Richter, W., Ploska, K., Kurpas, P., and Rose, K. C., Appl. Phys. Lett. (in press).Google Scholar
22. Esser, N., Köpp, M., Haier, P., Kelnberger, A., and Richter, W., I. Vac. Sci. Technol. Bll, 1481 (1993); V. Wagner, D. Drews, M. v. d. Einde, N. Esser, D. R. T. Zahn, J. Geurt, and W. Richter, Appl. Phys. Lett. (in press).Google Scholar
23. Kamiya, I., Tanaka, H., Aspnes, D. E., Koza, M., and R. Bhat, Appl. Phys. Lett. (in press).Google Scholar
24. Yasuda, T., Aspnes, D. E., Lee, D. R., Bjorkman, C. H., and Lucovsky, G., J. Vac. Sci. Technol. (in press).Google Scholar
25. Kisker, D. W., Fuoss, P. H., Tokuda, K. L., Renaud, G., Brennan, S., and Kahn, J. L., Appl. Phys. Lett. 56, 2025 (1990); P. H. Fuoss, D. W. Kisker, F. J. Lamnelas, G. B. Stephenson, P. Imperatori, and S. Brennan, Phys. Rev. Lett. 69, 2791 (1992).Google Scholar
26. Sankur, H., Southwell, W., and Hall, R., J. Electron. Mater. 20, 1099 (1991); K. Bacher, B. Pezeshki, S. M. Lord, and J. S. Harris, Jr., Appl. Phys. Lett. 61, 1387 (1992); S. A. Chalmers and K. P. Killeen, Appl. Phys. Lett. 62, 1182 (1993).CrossRefGoogle Scholar
27. Erman, M. and Theeten, J. B., J. Appl. Phys. 60, 859 (1986).CrossRefGoogle Scholar
28. Aspnes, D. E., Quinn, W. E., and Gregory, S., Appl. Phys. Lett. 56, 2569 (1990).Google Scholar
29. Kim, Y.-T., Collins, R. W., and Vedam, K., Surface Sci. 233, 341 (1990); I. An, Y. M. Li, H. V. Nguyen, and R. W. Collins, Rev. Sci. Instrum. 63, 3842 (1992).Google Scholar
30. Aspnes, D. E., Quinn, W. E., Tamargo, M. C., Pudensi, M. A. A., Schwarz, S. A., Brasil, M. J. S. P., Nahory, R. E., and Gregory, S., Appl. Phys. Lett. 60, 1244 (1992).Google Scholar
31. Johs, B., Edwards, J. L., Shiralagi, K. T., Droopad, R., K, Y. Choi, Maracas, G. N., Meyer, D., Cooney, G. T., and Woollam, J. A., Proc. Mater. Res. Soc. 222, 75 (1992).CrossRefGoogle Scholar
32. Tamargo, M. C., Brasil, M. J. S. P., Nahory, R. E., Aspnes, D. E., Philips, B., Hwang, D. M., Schwarz, S. A., and Quinn, W. E., Mater. Res. Soc. Symp. Proc. 263, 267 (1992).Google Scholar
33. Duncan, W. M. and Henck, S. A., Appl. Surface Sci. 63, 9 (1993); S. A. Henck, W. M. Duncan, L. M. Lowenstein, and S. W. Butler, J. Vac. Sci. Technol. All, 1179 (1993).Google Scholar
34. Maracas, G. N., Edwards, J. L., Shiralagi, K., Choi, K. Y., Droopad, R., Johs, B., and Woollam, J. A., J. Vac. Sci. Technol. A1O, 1832 (1992); G. N. Maracas, J. L. Edwards, D. S. Gerber, and R. Droopad, Appl. Surface Sci. 63, 1 (1993).CrossRefGoogle Scholar
35. Nguyen, H. V., An, I., and Collins, R. W., Phys. Rev. B47, 3947 (1993).Google Scholar
36. Studna, A. A., Aspnes, D. E., Florez, L. T., Wilkens, B. J., and Ryan, R. E., J. Vac. Sci. Technol. A7, 3291 (1989).Google Scholar
37. Macleod, H. A., Opt. Acta 19, 1 (1972); E. Pelletier, Proc. SPfIE 401, 74 (1983); R. Herrmann and A. Zöllner, Proc. SPIE 401, 83 (1983); C. J. van der Laan, Appl. Opt. 25, 753 (1986).Google Scholar
38. Aspnes, D. E., J. Opt. Soc. Am. A10, 974 (1993).Google Scholar
39. Pickering, C., in Handbook of Crystal Growth, vol. M (in press); W. Richter, Proc. Roy. Soc. (in press); D. E. Aspnes, Surface Science (in press).Google Scholar
40. Bedair, S. M., McDermott, B. T., Ide, Y., Karamn, N. H., Hashemi, H., Tischler, M. A., Timmons, M., Tam, J. C. L., and El-Masry, N., J. Cryst. Growth 93, 182 (1988).CrossRefGoogle Scholar
41. Im, F. K. Urban and Tabet, M. F., J. Vac. Sci. Technol. All, 976 (1993).Google Scholar
42. Wijers, C. M. J. and Poppe, G. P. M., Phys. Rev. B46, 7605 (1992); C. M. J. Wijers, G. P. M. Poppe, P. L. de Boeij, H. G. Bekker, and D. J. Wentink, Thin Solid Films (in press).Google Scholar
43. Morris, S. J. and Matthai, C. C., J. Vac. Sci. Technol. (submitted).Google Scholar
44. Chang, Y. C. and Aspnes, D. E., Phys. Rev. B41, 12002 (1990); Y. C. Chang, S. F. Ren, and D. E. Aspnes, J. Vac. Sci. Technol. A10, 1856 (1992).CrossRefGoogle Scholar
45. Joyce, B. A., Dobson, P. J., Neave, J. H., Woodbridge, K., Zhang, J., Larsen, P. K., and Bölger, B., Surface Sci. 186, 423 (1986).Google Scholar
46. Hingerl, K., Aspnes, D. E., Kamiya, I., and Florez, L. T., Appl. Phys. Lett. 63, 885 (1993).CrossRefGoogle Scholar
47. Beaglehole, D., Rev. Sci. Instrum. 59, 2557 (1988).CrossRefGoogle Scholar
48. Haverlag, M. and Oehrlein, G. S., J. Vac. Sci. Technol. B10, 2412 (1992).Google Scholar