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Real Time Process Monitoring with Multiwave-Length Pyrometric Interferometry (Pi)

Published online by Cambridge University Press:  22 February 2011

F.G. BÖbel ,
A. Wowchak ,
P.P. Chow ,
J. Van Hove  and
L.A. Chow
F.G. BÖbel
Affiliation:
Fraunhofer-Institut, Wetterkreuz 13, D-W-8520 Erlangen, Germany
A. Wowchak
Affiliation:
SVT Associates, 7620 Executive Drive, Eden Prairie, MN 55344
P.P. Chow
Affiliation:
SVT Associates, 7620 Executive Drive, Eden Prairie, MN 55344
J. Van Hove
Affiliation:
SVT Associates, 7620 Executive Drive, Eden Prairie, MN 55344
L.A. Chow
Affiliation:
Dept.of Materials Science and Engineering, Stanford University, Palo Alto, CA 94305
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Abstract

Pyrometry Interferometry (PI) is a powerful technique for in-situ sensing of the wafer temperature and growth rate. Evaluation of the two parameters would allow exact process control required for sophisticated device fabrication and material processing. The PI technique analyzes the interference patterns of the thermal radiation from the growing layer with a changing thickness d at growth temperature T. Since it is non-contact, applicable to all semiconductor materials and insensitive to wafer motion, the method is an ideal candidate for real time process control. We use a reflection assisted method to aid real time computation of these parameters. One could select the wavlength of interest to optimize the temperature and layer thickness resolution. We present data on MBE grown quarter wavelength stacks of GaAs and AlAs, and silicon oxidation to show P1 is extremely useful for growth of surface emitting laser and for silicon processing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 324: Symposium K – Diagnostic Techniques for Semiconductor Materials Processing , 1993 , 105
Copyright
Copyright © Materials Research Society 1994

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References

1. Hellman, E.S. and Harris, J.S. Jr., J.Cryst.Growth 81, 38(1987)Google Scholar
2. SpringThorope, R.J., Humphreys, T.P., Majeed, A. and Moore, W.T., Appl.Phys.Lett. 55, 2140(1989)Google Scholar
3. Johnson, S.R., Lavoie, C., Tiedje, T. and Mackenzie, J.A., JVST BI 1, 1007(1993)Google Scholar
4. Bobel, F.G., Bonnes, U., Frohmader, K.P., Proc 11th IEEE International Electronics Manufact. Techn.(IEMT) Symposium, Sept.(1991) San Francisco, CA, pp. 1197–1201.Google Scholar
5. Bobel, F.G., Moller, H., proc. 3rd IEEE Adv. Semiconductor Manufact. Conf Oct. (1992) Boston, MA, pp67–71. IEEE Catalog No.: 92-CH-31-3182-3.Google Scholar
6. Shanabrook, B.V. JR., Waterman, J.L. Davis, Wagner, R.J., and Katzer, D.S., JVST B11, 994(1993).Google Scholar