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Real time in-situ stress evolution investigation of highly textured electrodeposited bismuth thin films

Published online by Cambridge University Press:  15 February 2011

Donglei Fan ,
Frank Q. Zhu ,
Ingrid X. Shao ,
P. C. Searson  and
R. C. Cammarata
Donglei Fan
Affiliation:
Department of Materials Science and Engineering
Frank Q. Zhu
Affiliation:
Department of Physics and Astronomy Johns Hopkins University, Baltimore, MD, 21218, USA
Ingrid X. Shao
Affiliation:
Department of Materials Science and Engineering
P. C. Searson
Affiliation:
Department of Materials Science and Engineering
R. C. Cammarata
Affiliation:
Department of Materials Science and Engineering
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Abstract

Bismuth, a semi-metal with very long mean free path and large magnetoresistance (MR) effect, is a novel candidate material for thin film spintronic devices. Electrochemical deposition followed by a post-deposition anneal has resulted in highly textured bismuth films as characterized by x-ray diffractometry and pole figure measurements. A highly sensitive, real time in-situ stress measurement system was designed and employed to study stress generation during bismuth film growth. Bismuth films displayed a monotonically increasing compressive stress during deposition. The magnitude of the compressive stress decreased with the deposition rate in the range 1.5 Å/sec to 50 Å/sec.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 781: Symposium Z – Mechanisms in Electrochemical Deposition and Corrosion , 2003 , Z4.2
Copyright
Copyright © Materials Research Society 2003

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References

1. Yang, F.Y., Liu, K., Hong, K., Reich, D. H., searson, P.C. and Chien, C.L., Science 284, 1335 (1999).Google Scholar
2. Yang, F.Y., Liu, K., Chien, C.L., and Searson, P.C., Phys. Rev. Lett. 82, 3328 (1999).Google Scholar
3. Liu, K., Chien, C.L., Searson, P.C., and Yu-Zhang, K., Appl. Phys. Lett. 73, 1436 (1998).Google Scholar
4. Vereecken, P. M. and Searson, Peter C., Appl. Phys. Lett. 75, 3135 (1999).Google Scholar
5. Vereecken, P. M., Sun, L. and Searson, Peter C., J. Appl. Phys. 88, 6529 (2000).Google Scholar