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Reactive Ion Etchtng Model for Silicon Dioxide Guadalupe Fortuno

Published online by Cambridge University Press:  28 February 2011

Guadalupe Fortuño
Guadalupe Fortuño*
Affiliation:
IBM, East Fishkill Facility, Z/48A, Rt.52, Hopwell Junction, NY 12533.
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Abstract

The etching of SiO2 was studied during reactive ion etcing (RIE) in an SF plasma.The etch rate of SiO2, the sheath voltage and the wafer temperature were measured as a function of the percentage of SF6 in Ar and as a function of the total pressure.This was done with the purpose of better understanding the etching mechanisms involved.The results are compared with similar experiments carried out with CF4 and Ar [1].Tests to the model formulated will also be given.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 68: Symposium C – Plasma Processing , 1986 , 261
Copyright
Copyright © Materials Research Society 1986

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References

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