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Reactive Ion Etching of TaSix in a CF4-O2 Discharge

Published online by Cambridge University Press:  26 February 2011

C. P. Chen ,
K. S. Din  and
F. S. Huang
C. P. Chen
Affiliation:
Institute of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan, 30043, R.O.C.
K. S. Din
Affiliation:
Materials Research Laboratories, Industrial Technology Research Institute, Chu-tung, Taiwan, R.O.C.
F. S. Huang
Affiliation:
Institute of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan, 30043, R.O.C.
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Abstract

In the self-alignment technology for GaAs MESFET, the pattern technique for refractory suicide gate is needed. Reactive ion etching (RIE) of TaSix on GaAs has been performed in a mixture of CF4 and O2 Etching properties have been studied as function of oxygen percentage, total pressure and power. The samples were then examined in Scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) to understand the surface morphology and constitution. It is found that the etch rate of TaSixincreased with increasing oxygen percentage initially, reached a maximum value near 10∼15% O2, then started to decrease with increasing oxygen at applied power 100 watt, pressure 50 mtorr, and total gas flow 40 seem. This etch rate also increases with RF power and total pressure in CF4 + O2 15% gas at gas flow rate 40 sccm. For GaAs etching, the rate is independent of oxygen percentage. This etch rate of GaAs also increases with power, but decreases with total pressure. Meanwhile, the SEM micrograph shows no undercut for sample after RIE at the applied power 140 watt with the pressure of 20 mtorr.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 379
Copyright
Copyright © Materials Research Society 1992

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References

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