Hostname: page-component-6bf8c574d5-qdpjg Total loading time: 0 Render date: 2025-02-20T14:55:10.678Z Has data issue: false hasContentIssue false
  • English
  • Français

Reactive Ion Etching of AI(Cu) Alloys

Published online by Cambridge University Press:  25 February 2011

C.-K. Hu ,
M. B. Small  and
M. Schadt
C.-K. Hu
Affiliation:
T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, N.Y. 10598
M. B. Small
Affiliation:
T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, N.Y. 10598
M. Schadt
Affiliation:
T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, N.Y. 10598
Get access

Abstract

Reactive ion etching of Al( ≤ 4 wt.% Cu) and AI(Cu)/W films is described. Using single layer resist, 1 μm lines are demonstrated over 0.3 μm topography in the bilayer films and 0.5 um lines in the single layer layer films over planar surfaces. For Al alloys with Cu concentration in the ranges 2–4 wt.% it is found that clean etching is strongly dependent on deposition condition. A model is proposed to explain this.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 76: Symposium C – Science and Technology of Microfabrication , 1986 , 191
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Totta, P.A. and Sopher, R.P., IBM J. Res. Dev., 13,226 (1967).Google Scholar
2. d'Heurle, F.M. and Ho, P.S., in “Thin Films Interdiffusion ”, edited by Poate, J.M, Tu, K.N. and Mayer, J.W (John Wiley & Sons, Inc. N. Y., 1978), Chap. 8 Google Scholar
3. JK. Howard, White, J.F., Ho, P.S., J. Appl. Phys., 49,4083 (1978).Google Scholar
4. Denison, D.R. and Hartsough, L.D., J. Vac. Sci. Technol., 17, 1326 (1980). M.E. Thomas, T.K. Keyser, E.K.W. Goo, J. Appl. Phys. 59, 3768 (1986).Google Scholar
5. For an extensive review on dry etching Al and Al alloys, see Hess, D.W. and Bruce, R.H., in “Dry etching for Microelectronics”, edited by Powell, R.A. (Elsevier Scinnce Publisher B.V., 1984), Chap. 1 Google Scholar
6. Hu, C.-K. and Small, M.B. (unpublished).Google Scholar
7. Schwartz, G.C., Yang, J.M., Chow, M., Chaible, P.M., Legous, F., Lewis, R.K., (private communication).Google Scholar
8. Hornbogen, E., Aluminium, 43, 115 (1967).Google Scholar