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Reactive Ion Etching of AI(Cu) Alloys

Published online by Cambridge University Press:  25 February 2011

C.-K. Hu ,
M. B. Small  and
M. Schadt
C.-K. Hu
Affiliation:
T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, N.Y. 10598
M. B. Small
Affiliation:
T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, N.Y. 10598
M. Schadt
Affiliation:
T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, N.Y. 10598
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Abstract

Reactive ion etching of Al( ≤ 4 wt.% Cu) and AI(Cu)/W films is described. Using single layer resist, 1 μm lines are demonstrated over 0.3 μm topography in the bilayer films and 0.5 um lines in the single layer layer films over planar surfaces. For Al alloys with Cu concentration in the ranges 2–4 wt.% it is found that clean etching is strongly dependent on deposition condition. A model is proposed to explain this.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 76: Symposium C – Science and Technology of Microfabrication , 1986 , 191
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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