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Reaction of Excess Silicon Interstitals in the Presence of Arsenic and Germanium

Published online by Cambridge University Press:  17 March 2011

R. Brindos ,
P. H. Keys ,
M. Griglione ,
K. S. Jones ,
M. E. Law ,
Aditya Agarwal  and
Ebrahim Andideh
R. Brindos
Affiliation:
Department of Materials Science and Engineering, Swamp Center, 525 Engineering Bldg. #33University of Florida, Gainesville, FL 32611-6130
P. H. Keys
Affiliation:
Department of Electrical and Computer Engineering, Swamp Center, 525 Engineering Bldg. #33University of Florida, Gainesville, FL 32611-6130
M. Griglione
Affiliation:
Department of Electrical and Computer Engineering, Swamp Center, 525 Engineering Bldg. #33University of Florida, Gainesville, FL 32611-6130
K. S. Jones
Affiliation:
Department of Materials Science and Engineering, Swamp Center, 525 Engineering Bldg. #33University of Florida, Gainesville, FL 32611-6130
M. E. Law
Affiliation:
Department of Electrical and Computer Engineering, Swamp Center, 525 Engineering Bldg. #33University of Florida, Gainesville, FL 32611-6130
Aditya Agarwal
Affiliation:
Eaton Corporation, Beverly, MA 01915
Ebrahim Andideh
Affiliation:
Intel Corporation, Hillsboro, OR 97124-6497
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Abstract

CVD grown boron marker layers were used to monitor the release of silicon interstitials from an arsenic doped surface region that was subsequently implanted with silicon. These structures were annealed for various times at 750°C under a nitrogen gas flow. A comparison of boron spike enhancement and defect dissolution is made. It is shown that enhancement values from the Si+ implant were reduced at short times for samples containing arsenic compared to samples implanted with Si+ alone or As+ alone. The TEM results showed that defect densities were dramatically reduced for the samples containing As. These results imply that the previously reported reduction in {311} formation observed in As doped wells is most likely not a Fermi level effect and is consistent with the formation of As interstitial clusters (AsIC's). The data shows that AsIC's form and control extended defect formation and slow the enhanced diffusion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 610: Symposium B – Si Front End Processing - Physics & Technology..II , 2000 , B8.4
Copyright
Copyright © Materials Research Society 2000

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References

1 Nobili, D., Carabelas, A., Celotti, G., and Solmi, S., Journal of the Electrochemical Society 130, 922 (1983).10.1149/1.2119859Google Scholar
2 Solmi, S. and Nobili, D., Appl. Phys. Lett. 83, 2484 (1998).Google Scholar
3 Rousseau, P. M., Griffin, P. B., Fang, W. T., and Plummer, J. D., Journal of Applied Physics 84, 3593–601 (1998).10.1063/1.368593Google Scholar
4 Rousseau, P. M., Griffin, P. B., Luning, S., and Plummer, J. D., IEEE Transactions on Electron Devices 43, 2025–2027 (1996).10.1109/16.543044Google Scholar
5 Rousseau, P. M., Griffin, P. B., Kuehne, S. C., and Plummer, J. D., IEEE Transactions on Electron Devices 43, 547–553 (1996).10.1109/16.485536Google Scholar
6 Parsini, A., Bourret, A., Armigliato, A., Servidori, M., Solmi, S., Fabbri, R., Regnard, J. R., and Allian, J. L., J. Appl. Phys. 67, 2320 (1990).10.1063/1.345527Google Scholar
7 Dokumaci, O., Rousseau, P., Luning, S., Krishnamoorthy, V., Jones, K. S., and Law, M. E., J. Appl. Phys. 78, 828 (1995).10.1063/1.360271Google Scholar
8 Krishnamoorthy, V., Venables, D., Moeller, K., Jones, K. S., and Jackson, J., MRS Proceedings 469, 401–406 (1991).10.1557/PROC-469-401Google Scholar
9 Hsu, S. N. and Chen, L. J., J. Appl. Phys. 55, 2304 (1989).Google Scholar
10 Hsu, S. N. and Chen, L. J., Nuc. Instr. Meth. Phys. Res. B 55, 620 (1991).10.1016/0168-583X(91)96244-FGoogle Scholar
11 Jones, K. S., Downey, D., Miller, H., Chow, J., Chen, J., Puga-Lambers, M., Moller, K., Wright, M., Heitman, E., Glassberg, J., Law, M. E., Robertson, L., and Brindos, R., Kyoto, 1998.Google Scholar
12 Brindos, R., Keys, P., Law, M. E., and Jones, K. S., Appl. Phys. Lett. 75, 229 (1999).10.1063/1.124331Google Scholar
13 Agarwal, A., Gossman, H.-J., Eaglesham, D. J., Pelaz, L., Jacobson, D. C., Poate, J. M., and Haynes, T. E., Mat. Sci. and Eng. A253, 269 (1998).10.1016/S0921-5093(98)00735-7Google Scholar
14 Desroches, J., Krishnamoorthy, V., Jones, K. S., and Jasper, C., MRS Symposium Proceedings 469, 283–289 (1997).10.1557/PROC-469-283Google Scholar
15 Kittel, C., Introduction to Solid State Physics (John Wiley & Sons, New York, 1976).Google Scholar