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Reaction Kinetics of Sputter-Deposited Ti On SiO2 Substrates during Rapid Thermal Annealing

Published online by Cambridge University Press:  25 February 2011

E.J. Yun ,
H.G. Chun ,
K. Jung ,
D.L. Kwong  and
S. Lee
E.J. Yun
Affiliation:
Microelectronics Reasearch Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712
H.G. Chun
Affiliation:
Microelectronics Reasearch Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712
K. Jung
Affiliation:
Microelectronics Reasearch Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712
D.L. Kwong
Affiliation:
Microelectronics Reasearch Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712
S. Lee
Affiliation:
NCR Corporation, 1635 Aeroplaza Dr., Colorado Springs, CO 80916
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Abstract

In this paper, the interactions of sputter-deposited Ti on SiO2 substrates during rapid thermal annealing in nitrogen at 550°C - 900°C for 10 - 60 s have been systematically studied using X-ray diffraction, Auger electron spectroscopy, transmission electron diffraction, TEM & cross-sectional TEM, and sheet resistance measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 255
Copyright
Copyright © Materials Research Society 1989

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References

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