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Reaction Kinetics of Epitaxial Silicon Deposition at 220-400°C Using Remote Plasma-Enhanced Chemical Vapor Deposition

Published online by Cambridge University Press:  21 February 2011

B. Anthony ,
T. Hsu ,
L. Breaux ,
S. Banerjee  and
A. Tasch
B. Anthony
Affiliation:
The University of Texas, Department of Electrical and Computer Engineering, Austin, TX 78712
T. Hsu
Affiliation:
The University of Texas, Department of Electrical and Computer Engineering, Austin, TX 78712
L. Breaux
Affiliation:
The University of Texas, Department of Electrical and Computer Engineering, Austin, TX 78712
S. Banerjee
Affiliation:
The University of Texas, Department of Electrical and Computer Engineering, Austin, TX 78712
A. Tasch
Affiliation:
The University of Texas, Department of Electrical and Computer Engineering, Austin, TX 78712
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Abstract

In this paper the reaction kinetics of Remote Plasma-enhanced Chemical Vapor Deposition (RPCVD) are investigated. Growth rate characterization has been performed for substrate temperatures of 220 – 400°C, r-f powers from 4 – 8 W, and silane flow rates of 10 – 30 sccm. Growth rate has been found to increase exponentially with r-f power, which is, as yet, unexplained. An approximate square root dependence of growth rate on silane partial pressure agrees with the theory of Claasen et. Al for Chemical Vapor Deposition (CVD) of silicon from silane with an inert carrier gas. From an Arrhenius plot of the temperature dependence of growth rate, we note a change of slope at ∼300°C which we have attributed to the behavior of hydrogen at the silicon surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 165 , 1989 , 145
Copyright
Copyright © Materials Research Society 1990

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References

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