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Rbs Studies of Damage Behavior in Silicon Induced By P2+ Implantation

Published online by Cambridge University Press:  25 February 2011

Yang Genqing ,
Lin Chenglu ,
Fang Ziwei ,
Zhou Zuyao  and
Zou Shichang
Yang Genqing
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
Lin Chenglu
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
Fang Ziwei
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
Zhou Zuyao
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
Zou Shichang
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
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Abstract

The damage behavior of <100>-Si implanted with P2+ and P+ ions at equivalent energies were investigated by 2MeV He* backscattering and channeling analysis. Different incident energies (25-90keV/atom) and intermediate doses (1013–1014/cm2) were used for the implantation with sample holder being kept at temperatures ranging from 77k to 483K. It has been shown that the damage created by P2* implants is always greater than that of P2+ implants when the dosage is below the threshold fluence at which amorphization takes place. This damage enhancement phenomenon is strongly related to implantation temperature. A striking damage enhancement induced by 90 keV/atom P2+ implants in the surface region of the sample was observed, and it has been attributed to the multiple collision effect between diatomic ions and host atoms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 739
Copyright
Copyright © Materials Research Society 1990

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References

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