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RBS Lattice Site Location and Damage Recovery Studies In GaN

Published online by Cambridge University Press:  10 February 2011

E. Alves ,
M.F. DaSilva ,
J.C. Soares ,
J. Bartels ,
R. Vianden ,
C.R. Abernathy  and
S.J. Pearton
E. Alves
Affiliation:
ITN, Sacavém, Portugal
M.F. DaSilva
Affiliation:
ITN, Sacavém, Portugal
J.C. Soares
Affiliation:
ITN, Sacavém, Portugal
J. Bartels
Affiliation:
ISKP, University of Bonn, D-53115 Bonn, Germany, [email protected]
R. Vianden
Affiliation:
ISKP, University of Bonn, D-53115 Bonn, Germany, [email protected]
C.R. Abernathy
Affiliation:
Dept. Materials Science and Engineering, University of Florida, Gainesville, FL, USA
S.J. Pearton
Affiliation:
Dept. Materials Science and Engineering, University of Florida, Gainesville, FL, USA
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Abstract

Erbium was implanted with 160 keV at doses between 5x1014 and 5x1015 at/cm2 into (0001) epitaxial GaN on sapphire and annealed at various temperatures between 6000° and 10000° C. The RBS/Channeling technique was used to analyze the damage recovery during different annealing steps and to determine the lattice location of the implanted Er. For a sample implanted with 5x1014 and annealed for 30 min at 600° C a complete overlap of the Er and Ga angular scans across the <0001> axis was observed, indicating that 100% of Er occupies substitutional sites. Measurements along the <101> channel show that Er is located on Ga sites. The damage recovery was slightly better for the samples co-implanted with the same dose of Oxygen in an overlapping profile (E=25 keV). However, a complete recovery of the damage caused by the implantation was not achieved. Samples implanted with higher Er and 0 doses (5x 1015 at/cm2) and at the same energies as above were annealed at 600° for 30 min and at 900°, 1000° C for 120 s using a proximity cap. The higher dose caused an almost complete amorphisation of the surface layer. After annealing indications of epitaxial regrowth were observed, however, the substitutional fraction remains substantially lower and the damage recovery is less complete.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G11.2
Copyright
Copyright © Materials Research Society 1999

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References

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