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γ-Ray Irradiation Effect on the Intersubband Transition in Ingaas/Aigaas Multiple Quantum Wells

Published online by Cambridge University Press:  10 February 2011

M. O. Manasreh ,
J. R. Chavez ,
W. T. Kemp ,
K. Hoenshel  and
M. Missous
M. O. Manasreh
Affiliation:
Air Force Research Lab, 3550 Aberdeen Ave, SE, Kirtland AFB, NM 87117-5776.
J. R. Chavez
Affiliation:
Air Force Research Lab, 3550 Aberdeen Ave, SE, Kirtland AFB, NM 87117-5776.
W. T. Kemp
Affiliation:
Air Force Research Lab, 3550 Aberdeen Ave, SE, Kirtland AFB, NM 87117-5776.
K. Hoenshel
Affiliation:
Air Force Research Lab, 3550 Aberdeen Ave, SE, Kirtland AFB, NM 87117-5776.
M. Missous
Affiliation:
Center for Electronic Materials, Department of Electrical Engineering and Electronics, UMIST, Manchester, U.K.
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Abstract

Intersubband transitions in n-type InGaAs/AlGaAs multiple quantum wells were studied as a function of 1.0 to 5.0 MRad γ-ray irradiation dose using the optical absorption technique. The spectra were recorded at both 295 and 77K. The results show that the total integrated area of the intersubband transition is decreased as the irradiation dose is increased. This could be explained as follows: The secondary electrons generated from the γ-ray irradiation cause lattice damages where traps and point defects are created. Some of the electrons in the quantum wells are trapped by these defects causing the two dimensional electron gas (2DEG) density to decrease. The reduction of the 2DEG density thus leads to the reduction of the total integrated area of the intersubband transitions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 637
Copyright
Copyright © Materials Research Society 1998

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References

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