Hostname: page-component-cd9895bd7-dzt6s Total loading time: 0 Render date: 2024-12-27T18:14:04.015Z Has data issue: false hasContentIssue false
  • English
  • Français

Rare Earth Ion Implantation for Silicon Based Light Emission: From Infrared to Ultraviolet

Published online by Cambridge University Press:  01 February 2011

W. Skorupa ,
J. M. Sun ,
S. Prucnal ,
L. Rebohle ,
T. Gebel ,
A.N. Nazarov ,
I.N. Osiyuk ,
T. Dekorsy  and
M. Helm
W. Skorupa
Affiliation:
Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research, POB 510119, D-01314 Dresden, Germany nanoparc GmbH, Dresden - Rossendorf, Germany
J. M. Sun
Affiliation:
Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research, POB 510119, D-01314 Dresden, Germany
S. Prucnal
Affiliation:
Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research, POB 510119, D-01314 Dresden, Germany
L. Rebohle
Affiliation:
nanoparc GmbH, Dresden - Rossendorf, Germany
T. Gebel
Affiliation:
nanoparc GmbH, Dresden - Rossendorf, Germany
A.N. Nazarov
Affiliation:
Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kyiv, Ukraine corresponding author: [email protected]
I.N. Osiyuk
Affiliation:
Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kyiv, Ukraine corresponding author: [email protected]
T. Dekorsy
Affiliation:
Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research, POB 510119, D-01314 Dresden, Germany
M. Helm
Affiliation:
Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research, POB 510119, D-01314 Dresden, Germany nanoparc GmbH, Dresden - Rossendorf, Germany
Get access

Abstract

Using ion implantation different rare earth luminescent centers (Gd3+, Tb3+, Eu3+, Ce3+, Tm3+, Er3+) were incorporated into the silicon dioxide layer of a purpose-designed Metal Oxide Silicon (MOS) capacitor with advanced electrical performance, further called a MOS-light emitting device (MOSLED). The silicon dioxide layer did not contain silicon nanoclusters. Efficient electroluminescence was obtained from UV to infrared with a transparent top electrode made of indium-tin oxide. The electroluminescence properties were studied with respect to the luminescence spectra, decay time, impact excitation, cross relaxation (Tb3+), and power efficiency. Top values of the efficiency of 0.3 % corresponding to external quantum efficiencies well above the percent range were reached. The electrical properties of these devices such as current-voltage and charge trapping characteristics, were also evaluated. Moreover, we demonstrate photo- and electroluminescence in correlation to charge trapping characteristics for Er-rich MOSLEDs with a varying silicon cluster content. Finally, application aspects to the field of biosensing will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 866 , 2005 , V4.1/FF4.1
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Pavesi, L., Gaponenko, S., and Negro, L. Dal,(eds) “Towards the First Silicon Laser” Proc. NATO Adv. Research Workshop, Trento Sept. 21-26, 2002, (Kluwer Acad. Publ. 2003).Google Scholar
[2] Skorupa, W., Rebohle, L., Gebel, T., and Helm, M., in [1], p.69, and Appl.Phys. A76, 1049 (2003).Google Scholar
[3] Rebohle, L., Borany, J. von, Borchert, D., Fröb, H., Gebel, T., Helm, M., Möller, W., and Skorupa, W.: J. Electrochem. Soc.: Electrochem. and Solid State Lett. 7, G57 (2001).Google Scholar
[4] Sun, J.M., Skorupa, W., Dekorsy, T., Helm, M., Rebohle, L., and Gebel, T. Appl. Phys. Lett. 85, 3387 (2004).Google Scholar
[5] Sun, J.M., Skorupa, W., Dekorsy, T., Helm, M., Rebohle, L., and Gebel, T. J. Appl. Phys. (2005) submitted.Google Scholar
[6] Nagahama, S., et al., Phys. Stat. Sol. (a) 188, 1 (2001).Google Scholar
[7] Nazarov, A.N., Sun, J.M., Skorupa, W., Yankov, R.A., Osiyuk, I. N., Tjagulskii, I. P., Lysenko, V. S., and Gebel, T., Appl. Phys. Lett. 86, 151914 (2005).Google Scholar
[8] Nazarov, A.N., Gebel, T., Rebohle, L., Skorupa, W., Osiyuk, I.N. and Lysenko, V.S., J.Appl.Phys. 94, 4440 (2003).Google Scholar
[9] Nazarov, A.N., Skorupa, W., Osiyuk, I.N., Tjagulskii, I.P., Lysenko, V.S., Yankov, R.A. and Gebel, T., J. Electrochem. Soc. 152, F20 (2005)Google Scholar
[10] Fujii, M., Imakita, K., Watanabe, K., and Hayashi, S., J.Appl.Phys. 95, 272 (2004).Google Scholar
[11] Rebohle, L., Gebel, T., Yankov, R.A., Trautmann, T., Skorupa, W., Sun, J., Gauglitz, G., and Frank, R., Optical Materials 27, 1055 (2005)Google Scholar