Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-25T18:45:24.607Z Has data issue: false hasContentIssue false
  • English
  • Français

Rapid Thermal Oxidation of Polysilicon and Silicon

Published online by Cambridge University Press:  28 February 2011

Jaim Nulman
Jaim Nulman*
Affiliation:
AG Assocaites, 1325 Borregas Ave., Sunnyvale, CA 94089
Get access

Abstract

Growth kinetics of silicon dioxide films grown by rapid thermal processing on polysilicon and single crystal silicon films is described. Oxides were grown in pure oxygen and oxygen with up to 4% HCI. For process time in the 1 to 120 s, oxide films thicknesses in the 2 to 36 nm are obtained with a uniformity of ±2% across 100 mm wafers. These oxides show an interface density of states of 5×109 eV−1cm−2 after a 30 s post-oxidation anneal in nitrogen ambient at 1050 C.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 641
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Nulman, J., Krusius, J.P., Gat, A., IEEE Elec. Dev. Lett., EDL–6 (5), 205 (1985).Google Scholar
2. Nulman, J., Scarpulla, J., Mele, T.C., Krusius, J.P., IEEE Int. Elec. Dev. Meet. Technical Digest, 1985.Google Scholar
3. Weinberg, Z.A., Nguyen, T.N., Cohen, S.A., Kalish, R., Rapid Thermal Processing, edited by Sedwick, T.O., Seidel, T.E. and Tsaur, B.Y. (Material Research Society, Pittsburg, 1986), pp. 327–332.Google Scholar
4. Auto EL-IV, Rudolph Research, Flanders, N.J.Google Scholar
5. Maury, A., Kim, S.C., Manocha, A., Oh, K.H., Kostelnick, D., Shive, S., IEEE Int. Elec. Dev. Meet. Technical Digest, 1986.Google Scholar
6. Massoud, H.Z., Plummer, J.D., Irene, E.A., J. Electrochem. Soc., 132, 1745 (1985).Google Scholar
7. Deal, B.E., Grove, A.S., J. Appl. Phys., 36, 3770 (1965).Google Scholar
8. Nulman, J., in Silicon Nitride and Silicon Dioxide Thin Insulating Films, edited by Kapoor, V.J. (The Electrochem. Soc, Inc., Pennington, NJ, 1987) in press.Google Scholar
9. Shaffer, S.A., Lyon, S.A., J. Vac. Sci. technol., 21, 422 (1982).Google Scholar
10. Hashimoto, C., Muramoto, S., Shiono, N., Nakajima, O., J. Electrochem. Soc., 127 129 (1980).CrossRefGoogle Scholar
11. TCA is a trade mark of the J.C. Schumacher Co., Oceanside, CA.Google Scholar