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Rapid Thermal Chemical Vapor Deposition: Selective Epitaxial Silicon Growth (SEG)

Published online by Cambridge University Press:  28 February 2011

J. W. Osenbach ,
Y. H. Ku  and
A. Kermani
J. W. Osenbach
Affiliation:
AT&T Bell Laboratories, Reading, PA 19612
Y. H. Ku
Affiliation:
RAPRO Technology Inc., Fremont, CA 94539
A. Kermani
Affiliation:
RAPRO Technology Inc., Fremont, CA 94539
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Abstract

Rapid Thermal Chemical Vapor Deposition (RTCVD) offers great promise for deposition of high-quality, thin, abrupt interface epitaxial films. In addition, RTCVD systems operate under cold wall environment to minimize particles and cross contamination. SEG of silicon provides both isolation and active device wells with fine dimensional control. A combination of RTCVD and SEG holds great promise for future VLSI circuit technologies. In this paper, we present our results on selective growth of single crystal silicon using RTCVD.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 33
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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