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Rapid Thermal Anneaung of Arsenic-Phosphorus(N+-N-) Double-Diffused Shallow Junctions

Published online by Cambridge University Press:  26 February 2011

D. L. Kwong ,
N. S. Alvi ,
Y. H. Ku  and
A. W. Cheung
D. L. Kwong
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin Austin, Tx 78712
N. S. Alvi
Affiliation:
Delco Electronics, GMC, Kokomo, In 46902
Y. H. Ku
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin Austin, Tx 78712
A. W. Cheung
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin Austin, Tx 78712
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Abstract

Double-diffused shallow junctions have been formed by ion implantation of both phosphorus and arsenic ions into silicon substrates and rapid thermal annealing. Experimental results on defect removal, impurity activation and redistribution, effects of Si preamorphization, and electrical characteristics of Ti-silicided junctions are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 52: Symposium B – Rapid Thermal Processing , 1985 , 241
Copyright
Copyright © Materials Research Society 1986

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References

1. Abbas, S.A. and Dockerty, R.C., IEDM Tech. Dig., p35,1975.Google Scholar
2. Euzent, B., Proc. 15th Ann. IEEE Reliability Phys. Symp., 1977.Google Scholar
3. Cottrell, P.E., Troutman, R.R., and Ning, T.H., IEEE Trans. Electron Devices, p520, 1979.CrossRefGoogle Scholar
4. Matsunaga, J., Kohayama, K., Konoka, M., and Jizuka, H., Japan J. Appl. Phys., p93, 1980.Google Scholar
5. Ogura, et al, IEEE Trans. Electron Devices, ED–27, 1980.Google Scholar
6. Satoh, S., et al, Symp. VLSI Technol. Dig. Tech., 1982.Google Scholar
7. Takeda, E., Symp. VLSI Technol. Dig. Tech., 1982.Google Scholar
8. Koyahagi, M., et al, IEEE Trans. Electron Devices, ED–32, 1985.Google Scholar
9. Sedgwick, T.O., J. Electrochem. Soc., p484,1983.CrossRefGoogle Scholar
10. Wilson, S.R., etal IEEE Trans. Nucl. Sci., NS–30, p1734, 1983.Google Scholar
11. Seidel, T.E., et al, Nucl. Inst. & Meth in physics research. p251, 1985.Google Scholar
12. Proctor, S.J. and Linholm, L.W., IEEE Elect. Dev. Lett., p924, 1982.Google Scholar
13. Naguib, H.M. and Hobbs, L.H., J Electrochem. Soc., p573,1977.Google Scholar