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Rapid Thermal Annealing of Sputtered Ti-Ni-Si Films

Published online by Cambridge University Press:  28 February 2011

M. Setton ,
E. H. Horache ,
J. Van Der Spiegel ,
J. J. Santiago ,
J. E. Fischer  and
M. Siegal
M. Setton
Affiliation:
Laboratory for Research on the Structure of Matter Department of Materials Science and Engineering University of Pennsylvania, Philadelphia, Pa. 19104
E. H. Horache
Affiliation:
Laboratory for Research on the Structure of Matter Department of Materials Science and Engineering University of Pennsylvania, Philadelphia, Pa. 19104
J. Van Der Spiegel
Affiliation:
Laboratory for Research on the Structure of Matter Moore School of Electrical Engineering, Center for Sensor Technologies, University of Pennsylvania, Philadelphia, Pa. 19104
J. J. Santiago
Affiliation:
Laboratory for Research on the Structure of Matter Moore School of Electrical Engineering, Center for Sensor Technologies, University of Pennsylvania, Philadelphia, Pa. 19104
J. E. Fischer
Affiliation:
Laboratory for Research on the Structure of Matter Department of Materials Science and Engineering University of Pennsylvania, Philadelphia, Pa. 19104
M. Siegal
Affiliation:
Laboratory for Research on the Structure of Matter Department of Materials Science and Engineering University of Pennsylvania, Philadelphia, Pa. 19104
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Abstract

A ternary compound results from the fast radiative processing of Ni/Ti bilayers on Si<100> substrates. In the Ti-Ni-Si system, Ni is the dominant moving specie at low temperatures while Si starts to diffuse at 575°C. For bilayers with Ti in excess, the final product,above 750°C, is a mixture of ternary compound and TiSi2 whereas excess Ni leads to a layer of NiSi between the substrate and the ternary layer, at tempera-tures below 700° C.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 685
Copyright
Copyright © Materials Research Society 1987

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