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Rapid Thermal Annealing of Si-Implanted GaAs

Published online by Cambridge University Press:  22 February 2011

D.H. Rosenblatt ,
W.R. Hitchens ,
S. Shatas ,
A. Gat  and
D.A. Betts
D.H. Rosenblatt
Affiliation:
Watkins-Johnson Co., Palo Alto, CA 94304;
W.R. Hitchens
Affiliation:
Watkins-Johnson Co., Palo Alto, CA 94304;
S. Shatas
Affiliation:
AG Associates, Palo Alto, CA 94303;
A. Gat
Affiliation:
AG Associates, Palo Alto, CA 94303;
D.A. Betts
Affiliation:
Charles Evans and Associates, San Mateo, CA 94402
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Abstract

Heatpulse rapid thermal annealing was used to activate Si implants of 3.5 × 1012cm−2 at 100 keV and 1.0 × 1013 and 1.0 × 1014cm−2 at 200 keV into semi-insulating GaAs. The effects of Si3N4 encapsulation, anneal temperature and time, and substrate Cr-doping level were investigated. The annealed samples were characterized with C-V, Van der Pauw, differential Hall, and SIMS measurements. Conventional furnace anneals were carried out for comparison, and in all cases, Heatpulse anneals produced sharper carrier concentration profiles. 84% electrical activation was obtained for the 200 keV, 1.0 × 1013 cm−2 implant after a 950°C, 5 sec. Heatpulse anneal. Capped Heatpulse anneals produced less Cr depletion from the implanted region than furnace anneals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 669
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1.Kuzuhara, M., Kohzu, M., and Takayama, Y., Appl. Phys. Lett. 41, 755 (1982);Google Scholar
1a.IEDM 82 Proceedings, p. 170.Google Scholar
2.Davies, D. E., McNally, P.J., Lorenzo, J. P., and Julian, M., IEEE Electron Dev. Lett., EDL -3, 102 (1982).Google Scholar
3.Arai, M., Nishiyama, K., and Watanabe, N., Jpn. J. Appl. Phys. 20, L124 (1981).Google Scholar
4.Woodall, J. M., Rupprecht, H., Chicotka, R. J., and Wicks, G., Appl. Phys. Lett. 38, 639 (1981).Google Scholar