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Rapid Thermal Annealing of Pre-Amorphized B and BF2-Implanted Silicon

Published online by Cambridge University Press:  25 February 2011

I.D. Calder ,
H.M. Naguib ,
D. Houghton  and
F.R. Shepherd
I.D. Calder
Affiliation:
Northern Telecom Electronics, Box 3511, Stn. C, Ottawa, Ontario, K1Y 4H7
H.M. Naguib
Affiliation:
Northern Telecom Electronics, Box 3511, Stn. C, Ottawa, Ontario, K1Y 4H7
D. Houghton
Affiliation:
Bell-Northern Research, Box 3511, Stn. C, Ottawa, Ontario, K1Y 4H7
F.R. Shepherd
Affiliation:
Bell-Northern Research, Box 3511, Stn. C, Ottawa, Ontario, K1Y 4H7
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Abstract

Shallow p+n junctions have been formed through a combination of pre-amorphization of the silicon surface by implantation of 28Si, 33Ar, or 73Ge, low energy implantation of boron or BF2+, and rapid thermal annealing (RTA) in a tunqsten halogen lamp system. Both pre-amorphization and RTA are required to form a shallow (<0.25 μm) junction, for either boron or BF2+. Arqon pre-amorphization results in poor electrical activation of the boron, while germanium gives the lowest sheet resistivity, but is responsible for a deep boron tail during implantation. The residual damage is characterized by a plane of dislocation loops centred either close to the boron concentration peak, for B+ implantation into a crystalline substrate, or at the original amorphous-crystalline interface, for pre-amorphized specimens.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 353
Copyright
Copyright © Materials Research Society 1985

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References

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