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Rapid Thermal Annealing of Deposited Sio2 Films*

Published online by Cambridge University Press:  25 February 2011

J. Wong ,
T.-M. Lu ,
S.S. Cohen  and
S. Mehta
J. Wong
Affiliation:
Center for Integrated Electronics and AND Physics Dept., Rensselaer Polytechnic Institute, Troy, NY12181
T.-M. Lu
Affiliation:
Center for Integrated Electronics and AND Physics Dept., Rensselaer Polytechnic Institute, Troy, NY12181
S.S. Cohen
Affiliation:
General Electric Corporate Research and Development, Schenectady, NY12305
S. Mehta
Affiliation:
Ion Materials Systems, Eaton Corporation, Beverly, MA01915
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Abstract

Silicon dioxide films have beep deposited at an oxygen pressure and substrate temperature as low as 10−2 Pa and 300°C, respectively, using a partially ionized nozzle-beam technique. The refractive index of the film is equal to that of the thermally grown silicon dioxide film, but a frequency shift was obsrved in the infrared absorption peak at 1045 cm as compared to 1080 cm−1 of the thermally grown silicon dioxide film. This frequency shift disappeared after the deposited film was annealed in a rapid thermal annealing system utilizing an incoherent light source. We emphasize that from the standpoint of device fabrication, although the annealing temperature is high (%1100°C), the time is very short (seconds), so that this process is still compatible to the requirementsof low temperature processing. Effects of rapid thermal annealing on LPCVD and PECVD oxides are also studied and the results are compared to that of the oxide deposited by the partially ionized nozzle-beam technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 515
Copyright
Copyright © Materials Research Society 1985

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Footnotes

*

This work is supported in part by Semiconductor Research Corporation and Eaton Corporation.

References

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