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Rapid Thermal Annealing of B or N Implanted Monocrystalline 1-SiC Thin Films and its Effect on Electrical Properties and Device Performance

Published online by Cambridge University Press:  26 February 2011

Jae Ryu ,
H. J. Kim  and
R. F. Davis
Jae Ryu
Affiliation:
North Carolina State University, Materials Engineering Dept. Box 7907, Raleigh, NC 27695-7907
H. J. Kim
Affiliation:
North Carolina State University, Materials Engineering Dept. Box 7907, Raleigh, NC 27695-7907
R. F. Davis
Affiliation:
North Carolina State University, Materials Engineering Dept. Box 7907, Raleigh, NC 27695-7907
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Abstract

The annealing behavior of B or N dual implants in 1-SiC thin films has been studied using cross-sectional transmission electron microscopy (XTEM), secondary ion mass spectroscopy (SIMS), and four point probe electrical measurements. A high resistivity layer was produced after annealing the B implanted-amorphous layer in the temperature range from 1000°C to 1500°C for 300 a; however, the resistivity rapidly decreased as a result of annealing at higher temperatures. The reasons for these changes in resistivity and the lack of p-type conduction at all annealing temperatures in these B implants include: (1) possible compensation of the native n-type carriers, (2) reduction in the B concentration via formation of B-containing precipitates between 1300°C and 1600°C and out diffusion of this species at and above 1600°C, and (3) creation of additional n-type carriers.

No precipitates or defect structure was observed in N implanted-annealed samples. The resistivity of this non amorphous n-type layer decreased with increasing annealing temperatures from 700°C to 1800°C. Furthermore n-p junction diodes were fabricated for the first time in β-SiC via N implantation into samples previously in situ doped with 8 × 1018/cm3 Al coupled with rapid thermal annealing at 1200°C for 300 a. A typical diode ideality constant and a saturation current for these diodes was 3.4 and 9 × 10-10 A/cm2, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 52: Symposium B – Rapid Thermal Processing , 1985 , 165
Copyright
Copyright © Materials Research Society 1986

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References

1. Leith, F.A., King, W. J. and McNally, P., Air Force Contract AFCRL-67-0123, Ion Physics Co., (1967).Google Scholar
2. Dunlap, H.L. and Marsh, O.J., Appl. Phys. Lett. 15, 311 (1969).Google Scholar
3. Marsh, O.J. and Dunlap, H.L., Rad. Effects 6, 301 (1970)Google Scholar
4. Addamiano, A., Anderson, G.W., Comas, J., Hughes, H.L. and Lucke, W., J. Electrochem. Soc. 119, 1355 (1972).Google Scholar
5. Marsh, O.J., in Silicon Carhide-1973, Marshall, R.C., Faust, J.W. and Ryan, C.E. Eds., §University of South Carolina Press, Columbia, SC, 1974† p. 471.Google Scholar
6. Comas, J., Lucke, W. and Addamiano, A., Bull. Am. Phys. Soc. 18, 606 (1973).Google Scholar
7. Kalinina, E.V., Suvorov, A.V., and Kholuyanov, G.F., Soy. Phys. Semicon. 14, 652 (1980).Google Scholar
8. Liaw, H.P. and Davis, R.F., J. Electrochem. Soc., 132, 642 (1985).Google Scholar
9. Nishino, S., Powell, J.A. and Will, H.A., Appl. Phys. Lett. 42, 460 (1983).Google Scholar
10. Nishino, S., Hazuki, Y., Matsunami, H. and Isnaka, I., J. Electrochem. Soc. 127, 2674 (1980).Google Scholar
11. Carter, C.H. Jr., Edmond, J.A., Palmour, J.W., Ryu, J., Kim, H.J. and Davis, R.F., presented at 1985 Spring Meeting of MRS, San Francisco; to be published in the MRS Symposia Proc.Google Scholar
12. Ryu, J.S. and Davis, R.F., presented at the AIME Electronic MaterialsW Conference, Boulder, CO, June, 1985, paper in preparation.Google Scholar
13. Palmour, J.W., Davis, R.F., Wallett, T.M. and Bhasin, K.B., submitted to the J. Am. Vacuum Soc.Google Scholar
14. Hunsperger, R., Marsh, O. and Mead, C., Appl. Phys. Lett. 13, 295 (1968).Google Scholar