Hostname: page-component-cd9895bd7-7cvxr Total loading time: 0 Render date: 2024-12-27T00:38:23.698Z Has data issue: false hasContentIssue false
  • English
  • Français

Rapid Thermal Annealing of As in Si

Published online by Cambridge University Press:  26 February 2011

J. L. Hoyt  and
J. F. Gibbons
J. L. Hoyt
Affiliation:
Stanford Electronics Laboratories, Stanford, CA 94305
J. F. Gibbons
Affiliation:
Stanford Electronics Laboratories, Stanford, CA 94305
Get access

Abstract

The results of a detailed investigation of the diffusion of ion implanted As in Si during Rapid Thermal Annealing (RTA) are reported. A series of experiments has been performed on samples implanted with As in a wide range of concentrations. The use of an improved thermocouple bonding technique enables precise measurement and control of the temperature versus time cycle for each individual sample. The RTA apparatus is designed to perform high vacuum annealing, eliminating the complications associated with point defect generating mechanisms at the surface, which are known to influence the diffusion of impurities in Si. Sample analysis includes depth profiling by SIMS and RBS, and electrical characterization employing VanderPauw and Spreading Resistance measurements.

The resulting profiles have been analyzed via a numerical solution of the diffusion equation subject to the appropriate boundary conditions. With an effective As diffusivity of the form we find good simulation of all measured profiles with the standard values of D0 and D- from SUPREMIII and a one parameter fit to D= Recent results on the redistribution of low dose As implants in heavily phosphorus doped Si illustrate the strong Fermi level dependence. The model has also been successfully used to simulate RTA data in the literature where careful temperature measurements have been made.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 52: Symposium B – Rapid Thermal Processing , 1985 , 15
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Baumgart, H., Celler, G.K., Lischner, D.J., Robinson, McD., and Sheng, T.T., in Laser-Solid Interactions and Transient Thermal Processing of Materials, edited by Narayan, J., Brown, W.L., and Lemons, R.A. (Elsevier Science Publishers, New York, 1983), pp. 349–354.Google Scholar
2. Benton, J.L., Celler, G.K., Jacobson, D.C., Kimmerling, L.C., Lischner, D.L., Miller, G.L., Robinson, Mc.D., in Laser and Electron-Beam Interactions with Solids, edited by Appleton, B.R. and Celler, G.K. (Elsevier Science Publishers, New York, 1982), pp. 765–770.Google Scholar
3. Hodgson, R.T., Deline, V., Mader, S.M., Morehead, F.F., and Gelpey, J., in Energy Beam-Solid Interactions and Transient Thermal Processing, edited by Fan, J.C.C. and Johnson, N.M. (Elsevier Science Publishers, New York, 1984), 253–257.Google Scholar
4. Kalish, R., Sedgwick, T.O., Mader, S., and Shatas, S., Appl. Phys. Lett. 44,107 (1984).Google Scholar
5. Seidel, T.E., Lischner, D.J., Pai, C.S., Knoell, R.V., Maher, D.M., J. Nuc. Instr. & Meth. in Phys. Res.-Sec. B: Beam Interactions with Materials and Atoms, edited by Anderson, H.H. and Picraux, S.T. (North Holland, Amsterdam, 1985),Vol. B7/8,Part I, p. 251.Google Scholar
6. Sedgwick, T.O., Michel, A.E., Cohen, S.A., Deline, V.R., and Oehrlein, G.S., Appl. Phys. Lett. 47,848 (1985).Google Scholar
7. The development of this technique was inspired by the work of Pensl, G. while on leave at Stanford from the University of Erlangen, Erlangen, FRG.Google Scholar
8. Fair, R.B. and Tsai, J.C.C., J. Electrochem. Soc. 124, 1107 (1977).Google Scholar
9. Ho, C.P., Hansen, S.E.,and Fahey, P.M., SUPREMIII: A Program for Integrated Circuit Process Modeling and Simulation, Tech. Report No. SEL84-001,ICL,SEL, July 1984.Google Scholar
10. Lietoila, A., Gibbons, J.F.,andSigmon, T.W.,Appl. Phys. Lett. 36,765 (1980).Google Scholar
11. Nobili, D., Carabelas, A., G. Celotti,and S. Solmi,J. Electrochem. Soc. 130,922 (1983).Google Scholar
12. Tsai, M.Y., Morehead, F.F., Baglin, J.E.E., and Michel, A.E., J. Appl. Phys. 51,3230 (1980).Google Scholar
13. Shibayama, H., Masaki, H., and Hashimoto, H.,Appl Phys. Lett. 27,230 (1975).Google Scholar
14. Fair, R.B. and Weber, G.R., J. Appl. Phys. 44,273 (1973).Google Scholar
15. Angelucci, R., Celotti, G., Nobili, D., and Solmi, S., J. Electrochem. Soc. 132,2726 (1985).CrossRefGoogle Scholar
16. Fahey, P., Barbuscia, G., Moslehi, M., and Dutton, R.W., Appl. Phys. Lett. 46,784 (1985).CrossRefGoogle Scholar
17. Lietoila, A., Gold, R.B., Gibbons, J.F., Sigmon, T.W., Scovell, P.D., and Young, J.M., J. Appl. Phys. 52,230 (1981).Google Scholar
18. Kirillov, D., Powell, R.A., and Hodul, D.T., J. Appl. Phys. 58, 2174 (1985).Google Scholar
19. Goetzlich, J., presented at the 1985 MRS Spring Meeting, San Francisco, CA, 1985 (to be published).Google Scholar
20. Pennycook, S.J., Narayan, J., and Holland, O.W., J. Electrochem. Soc. 132,1962 (1985).CrossRefGoogle Scholar