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Rapid Thermal Annealing of Al and P Implanted Single Crystal Beta Silicon Carbide Thin Films

Published online by Cambridge University Press:  26 February 2011

J. A. Edmond ,
H. J. Kim  and
R. F. Davis
J. A. Edmond
Affiliation:
Department of Materials Engineering, North Carolina State University, Raleigh, NC 27695-7907
H. J. Kim
Affiliation:
Department of Materials Engineering, North Carolina State University, Raleigh, NC 27695-7907
R. F. Davis
Affiliation:
Department of Materials Engineering, North Carolina State University, Raleigh, NC 27695-7907
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Abstract

Ion implantation of 27Al+ and 31p+ ions into monocrystalline s-SiC films was conducted in order to acquire p-type and n-type conducting layers, respectively. Implant energies ranging from 110 to 190 keV and fluences from 7 × 1013 to 9 × 1014 cm-2 were used. In order to activate each dopant specie, rapid thermal annealing (RTA) was employed. A decrease in sheet resistance with increasing annealing temperature for both type layers was observed up to 1800°C. After annealing at this highest temperature for 300 s in 1 atm. Ar, the percent of activated and ionized n-type and p-type dopant was ≅20% and ≅0.5%, respectively, as determined by room temperature capacitance-voltage measurements. Recrystallization of both heavily damaged and amorphized layers occurred as a result of the use of the aforementioned annealing process. Unlike SPE regrowth in other compound semiconductors, no microtwins were present in the regrown bulk as observed by XTEM. SIMS analyses also showed that there was essentially no redistribution of P and moderate redistribution of Al from the corresponding as-implanted profiles after annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 52: Symposium B – Rapid Thermal Processing , 1985 , 157
Copyright
Copyright © Materials Research Society 1986

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References

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