Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-16T16:14:35.359Z Has data issue: false hasContentIssue false
  • English
  • Français

Rapid Thermal Annealed Tiw/Ti Contact Metallization for Advanced Vlsi Si Circuits

Published online by Cambridge University Press:  25 February 2011

Henry W Chung  and
Agnes T. Yao
Henry W Chung
Affiliation:
Philips Research and Development Center, Philips Components-Signetics, 811 E. Arques Av., Sunnyvale, CA 94088
Agnes T. Yao
Affiliation:
Philips Research and Development Center, Philips Components-Signetics, 811 E. Arques Av., Sunnyvale, CA 94088
Get access

Abstract

Rapid thermal annealed (RTA) bilayers of TiW/Ti were evaluated for contact metallization in advanced VLSI Si circuits. It was found that RTA and a minimum thickness of Ti are necessary to achieve consistently low p+ contact resistance. RTA has little effect on n+ and polysilicon contact resistances. With RTA, TiSi2 is formed at the Ti/Si interface and a thin nitrogen-containing layer is formed on the TiW surface. By controlling RTA temperature and time, the interaction between Si and TiW during RTA could be minimized while the gain factor of p-channel MOSFETs was not degraded. Moreover, the leakage currents of n+ and p+ contact chains did not increase after 30 minute anneals up to 525C

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 199
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Cohen, S.S., Kim, M.J., Gorowitz, B., Saia, R., and McNelly, T.F., Appl. Phys. Lett. 45(4), 414, 1984.CrossRefGoogle Scholar
2. Wolters, R.A.M. and Nellissen, A.J.M., Proceedings of IEEE VLSI Multilevel Interconnection Conference, 351, 1987.Google Scholar
3. Ting, C.Y. and Wittmer, M., J. Appl. Phys. 54(2), 937, 1983.CrossRefGoogle Scholar
4. Haken, R.A., J. Vac. Sci. Technol. B, 3(6), 1657, 1985.CrossRefGoogle Scholar
5. Kramer, R., Extended Abstract, Electrochem. Soc., Spring Meeting, 182, 1989.Google Scholar
6. Sze, S.M., Physics of Semiconductor Devices, John Wiley & Sons, 191.Google Scholar
7. Hui, J., Wong, S., and Moll, J., Electron Device Lett. 6(5), 479, 1985.CrossRefGoogle Scholar
8. Agnes Yao, Philips Components internal report, 1988.Google Scholar