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Rapid Structural Defect Mapping of Bulk II-VI Semiconductors Using White-Beam Synchrotron Topography and X-ray Rocking Curve Analysis

Published online by Cambridge University Press:  03 September 2012

Don Di Marzio ,
Louis G. Casagrande ,
Myung B. Lee ,
Thomas Fanning  and
Michael Dudley
Don Di Marzio
Affiliation:
Grumman Corporate Research Center, Bethpage, NY 11714
Louis G. Casagrande
Affiliation:
Grumman Corporate Research Center, Bethpage, NY 11714
Myung B. Lee
Affiliation:
Grumman Corporate Research Center, Bethpage, NY 11714
Thomas Fanning
Affiliation:
Dept. of Materials Science & Engineering, SUNY at Stony Brook, Stony Brook, NY 11794
Michael Dudley
Affiliation:
Dept. of Materials Science & Engineering, SUNY at Stony Brook, Stony Brook, NY 11794
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Abstract

Nondestructive characterization techniques for substrates, epilayers, and device structures are becoming increasingly important in the semiconductor industry. Synchrotron-based white-beam x-ray topography, x-ray rocking curve measurements, and etch pit density were used to map the defect structure in a variety of CdTe and CdZnTe single crystal substrates, which are important for IR detector applications involving HgCdTe. Defects such as low angle grain boundaries have been successfully correlated using topography, rocking curves, and etch pit density, and twins have been observed using topography and rocking curves. The effectiveness of white-beam synchrotron topography for rapid and nondestructive defect analysis and substrate screening is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 215
Copyright
Copyright © Materials Research Society 1992

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References

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