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A Rapid Specimen Preparation Technique For Cross-Section Tem Investigation Of Semiconductors and Metals

Published online by Cambridge University Press:  21 February 2011

J. Vanhellemont ,
H. Bender  and
L. Rossou
J. Vanhellemont
Affiliation:
Interuniversity Micro-Electronics Center (IMEC), Kapeldreef 75, B-3030 Leuven, Belgium
H. Bender
Affiliation:
Interuniversity Micro-Electronics Center (IMEC), Kapeldreef 75, B-3030 Leuven, Belgium
L. Rossou
Affiliation:
Universiteit Antwerpen, RUCA, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium
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Abstract

A simple and rapid specimen preparation technique for the cross section TEM investigation of layered structures is discussed. Its wide applicability is illustrated for the investigation of processed silicon, compound semiconductors, silicon on quartz and also for metal/metal oxide interfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 115: Symposium W – Specimen Preparation for Transmission Electron Microscopy of Materials I , 1987 , 247
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

[1] Abrahams, M.S. and Buiocchi, C.J., J.Appl.Phys. 45,3315 (1974).CrossRefGoogle Scholar
[2] Sheng, T.T. and Marcus, R.B., J. Electrochem. Soc. 127, 737 (1980).CrossRefGoogle Scholar
[3] Henghuber, G., Oppolzer, H. and Schild, S., Siemens Forsch. Entwickl. Ber. 9, 363 (1980).Google Scholar
[4] Vanhellemont, J., Bender, H., Claeys, C., Van Landuyt, J., Declerck, G., Amelinckx, S. and Van Overstraeten, R., Ultramicroscopy 11, 303 (1983).CrossRefGoogle Scholar
[5] Bravman, J.C. and Sinclair, R., J.Electron Microsc.techn. 1, 53 (1984).CrossRefGoogle Scholar
[6] Chew, N.G. and Cullis, A.G., Ultramicroscopy 23, 175 (1987).CrossRefGoogle Scholar
[7] Bulle-Lieuwma, C.W.T. and Zalm, P.C., Surface and Interface Analysis.10, 210 (1987).CrossRefGoogle Scholar
[8] Vanhellemont, J., Terrijn, H., Van Landuyt, J. and Vereecken, J., Proc Kyoto (1986).Google Scholar
[9] Vanhellemont, J., Bender, H. and Claeys, C., Proc. GADEST 87, ed. Richter, H., Inst. Physics of Semiconductors, Frankfurt(Oder), DDR, 130 (1987).Google Scholar
[10] Bender, H., Inst. Phys. Conf. Ser. 76,17 (1985).Google Scholar
[11] Bender, H. and Vanhellemont, J., to be published in Phys. Stat. Sol..Google Scholar