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Rapid Plasma-Assisted, Ambient-Pressure Deposition of Conformal Nanocrystalline Zinc Oxide Thin Films for Solar Cell Applications

Published online by Cambridge University Press:  20 June 2011

Joachim D. Pedersen  and
Kwok Siong Teh
Joachim D. Pedersen
Affiliation:
School of Engineering, San Francisco State University 1600 Holloway Avenue, San Francisco, CA 94132
Kwok Siong Teh
Affiliation:
School of Engineering, San Francisco State University 1600 Holloway Avenue, San Francisco, CA 94132
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Abstract

This paper reports a plasma-assisted, rapid, ambient-pressure, low-temperature one-step process for depositing conformal, non-porous nanocrystalline ZnO thin film on various substrates ranging from Si (100), fused quartz, glass, muscovite, c- and a-plane sapphire (Al2O3), to the common polymer polyimide (KaptonTM). The as-synthesized polycrystalline films range in thickness from 20nm to 200nm, deposited at a growth rate ranging from 2 nm/min to 50 nm/min. The lowest deposition temperature achieved with this method is 180°C and progress is being made in further lowering this temperature. The as-deposited films are highly oriented in the caxis, with (002) being the dominant planes.

Keywords

plasma depositionnanostructureZn
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1323: Symposium C – Advanced Materials Processing for Scalable Solar-Cell Manufacturing , 2011 , mrss11-1323-c03-23
Copyright
Copyright © Materials Research Society 2011

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References

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