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Rapid Isothermal Processing of Strained GeSi Layers

Published online by Cambridge University Press:  28 February 2011

D. K. Nayak ,
K. Kamjoo ,
J. S. Park ,
J. C. S. Woo  and
K. L. Wang
D. K. Nayak
Affiliation:
Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, CA 90024-1594.
K. Kamjoo
Affiliation:
Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, CA 90024-1594.
J. S. Park
Affiliation:
Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, CA 90024-1594.
J. C. S. Woo
Affiliation:
Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, CA 90024-1594.
K. L. Wang
Affiliation:
Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, CA 90024-1594.
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Abstract

The effects of high temperature-time thermal cycles on the structural stability of GexSi1−x/Si and Si/GexSi1−x/Si layers are studied, using double-crystal x-ray diffraction. The temperature-time cycles chosen in this study are useful for the fabrication of submicron Si MOSFETs. The electrical characteristics of GeSi/Si p-n heterojunctions as a function of annealing temperature and time are also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 224: Symposium F – Rapid Thermal and Integrated Processing I , 1991 , 89
Copyright
Copyright © Materials Research Society 1991

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References

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