Hostname: page-component-6bf8c574d5-956mj Total loading time: 0 Render date: 2025-02-20T14:55:19.670Z Has data issue: false hasContentIssue false
  • English
  • Français

Rapid Growth of Thick, IC Quality GaAs From a Flowing Solution

Published online by Cambridge University Press:  28 February 2011

E. E. Crismant ,
J. T. Daly ,
C. B. Roberts ,
D.T. Schaafsma ,
H. J. Gerritsen  and
S. K. F. Karlsson
E. E. Crismant
Affiliation:
Division of Engineering, Brown University, Providence, RI
J. T. Daly
Affiliation:
Department of Physics, Brown University, Providence, RI Currently with Spire Corporation, Bedford, MA
C. B. Roberts
Affiliation:
Department of Physics, Brown University, Providence, RI Currently with Spire Corporation, Bedford, MA
D.T. Schaafsma
Affiliation:
Department of Physics, Brown University, Providence, RI Currently with Bandgap Technology Corporation, Broomfield, CO
H. J. Gerritsen
Affiliation:
Department of Physics, Brown University, Providence, RI
S. K. F. Karlsson
Affiliation:
Division of Engineering, Brown University, Providence, RI
Get access

Abstract

Single crystal layers of gallium arsenide have been grown on <111> and <100> oriented GaAs substrates using a flowing solution of gallium saturated with GaAs. With this novel technique, growth rates as high as 9.Oµm/min have been achieved for 5 minutes, while rates of approximately Aµmlmin are typically achieved for 20 minutes of growth. These figures are in good agreement with a previously developed theoretical model and are about two orders of magnitude greater than those for conventional, static solution, liquid phase epitaxy (LPE) for layer thicknesses greater than lµm. Undoped, p-doped and n-doped layers of high crystallographic and electronic quality have been grown. A description of the technique and some of the electro-optical properties are presented in this paper.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 451
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1Hsieh, J. J., J. Crystal Growth 27,49 (1974).Google Scholar
2Lawrence, D. J., Eastman, L. F., J. Crystal Growth 30, 267–275 (1975).Google Scholar
3Cook, M., Holobeam, Inc., Ridgewood, NJ 07451, Patent applied for.Google Scholar
4Daly, J. T. et al. , J. Crystal Growth 78, (1986) 291–302.Google Scholar
5Semiconductor Lasers and Heterojunction LED’s by Kressel, H. and Butler, K., 330, (1977).Google Scholar
6Blakemore, J. S., J. Appl. Phy. 53 (1982)Google Scholar