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Rapid Growth of Diamond-Like-Carbon Films by Copper Vapor Laser ablation

Published online by Cambridge University Press:  21 February 2011

W. Mclean ,
B. E. Warner ,
M. A. Havstad  and
M. Balooch
W. Mclean
Affiliation:
University of California, Lawrence Livermore National Laboratory, P.O. Box 808, L-460, Livermore, CA, 94550.
B. E. Warner
Affiliation:
University of California, Lawrence Livermore National Laboratory, P.O. Box 808, L-460, Livermore, CA, 94550.
M. A. Havstad
Affiliation:
University of California, Lawrence Livermore National Laboratory, P.O. Box 808, L-460, Livermore, CA, 94550.
M. Balooch
Affiliation:
University of California, Lawrence Livermore National Laboratory, P.O. Box 808, L-460, Livermore, CA, 94550.
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Abstract

Visible light from a copper vapor laser (CVL) operating with 510 and 578 nm radiation (intensity ratio approximately 2:1), an average power of 100 W, a pulse duration of 50 ns, and a repetition frequency of 4.4 kHz has been shown to produce high quality diamond-like-carbon (DLC) films at fluences between 2xl08 and 5xl010 W/cm2. Maximum deposition rates of 2000 μm.cm2/h were obtained at 5xl08 W/cm2. DLC films with hardness values of approximately 60 GPa were characterized by a variety of techniques to confirm DLC character, hydrogen content, and surface morphology. the presence of C2 in the vapor plume was confirmed by the presence of the C2 Swan bands in emission spectra obtained during the process. Economic implications of process scale-up to industrially meaningful component sizes are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 388: Symposium Q – Film Synthesis and Growth Using Energetic Beams , 1995 , 121
Copyright
Copyright © Materials Research Society 1995

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References

1 Sato, T., Furuno, S., Iguchi, S., and Hanabusa, M., Appl. Phys. A 45, 335 (1988).Google Scholar
2 Krishnaswamy, J., Rengan, A., Narayan, J., Vedam, K., and McHargue, C. J., Appl. Phys. Lett 54, 2455 (1989).Google Scholar
3 T, P. and T.Peeler, D., Appl. Surface Sci. 69, 225 (1993).Google Scholar
4 T, P. and Peeler, D. T., J. Elec. Mater., 23, 855 (1994).Google Scholar
5 Collins, C. B., Davanloo, F., Juengerman, E. M., Osborn, W. R., and Jander, D. R., Appl. Phys. Lett. 54, 216 (1989).Google Scholar
6 Robertson, J., Adv. IN Phys. 4, 317 (1986).Google Scholar
7 Savvides, N., Mater. Sci. Forum, 52&53, 407 (1989).Google Scholar
8 -C. Tsai, H. and Bogey, D. B., J. Vac. Sci. Technol. A 5, 3787 (1987).Google Scholar
9 Chen, X., Mazumder, J., and Purohit, A. Appl. Phys. 52, 328 (1991).Google Scholar
10 Berzins, L. V., Lawrence Livermore National Laboratory (private communication).Google Scholar
11 Boley, C. D. and Early, J. T., Lawrence Livermore National Laboratory, UCRL-JC-117078 (1994).Google Scholar
12 Jansen, F., Machonkin, M., Kaplan, S., and Hark, S., Vac, J.. Sci. Technol. A3, 605 (1985).Google Scholar