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Rapic Thermal Annealing of W-TI Bilayers on Silicon

Published online by Cambridge University Press:  26 February 2011

C. S. Wei ,
J. Van der Spiegel ,
M. Setton ,
J. Santiago ,
M. Tanielian  and
S. Blackstone
C. S. Wei
Affiliation:
University of Pennsylvania, Department of Electrical Engineering D-2, Philadelphia, PA 19104-6390
J. Van der Spiegel
Affiliation:
University of Pennsylvania, Department of Electrical Engineering D-2, Philadelphia, PA 19104-6390
M. Setton
Affiliation:
University of Pennsylvania, Department of Electrical Engineering D-2, Philadelphia, PA 19104-6390
J. Santiago
Affiliation:
University of Pennsylvania, Department of Electrical Engineering D-2, Philadelphia, PA 19104-6390
M. Tanielian
Affiliation:
University of Pennsylvania, Department of Electrical Engineering D-2, Philadelphia, PA 19104-6390
S. Blackstone
Affiliation:
University of Pennsylvania, Department of Electrical Engineering D-2, Philadelphia, PA 19104-6390
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Abstract

W-Ti bilayers on Si have been processed by fast thermal annealing in air, in N2/H2 (5%), and vacuum (1 E-3 and 1 E-6 Torr). The results indicate that the W layer on top of Ti acts as an effective protection barrier against oxidation of Ti in all atmospheres except air. Titanium-rich silicides are formed after 500 °C, while TiSi2 is completed at about 600 °C. At 700 °C a bilayer of WSi2/TiSi2 is found. Silicon is found to be the diffusing specie during the formation of WSi2. Finally, a ternary silicide, Ti0.6W0.4Si2, starts to form after 780 °C. The final ternary silicide phase has'an Mlectrical resistivity of about 60 μΩ-cm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 52: Symposium B – Rapid Thermal Processing , 1985 , 297
Copyright
Copyright © Materials Research Society 1986

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